Composite STI Structure for Semiconductor Heat Dissipation
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Solution Overview
Problem
The increasing power consumption of silicon transistors in semiconductor devices leads to elevated junction and chip temperatures due to limited heat-dissipation capabilities, hindering further integration and performance improvements.
Innovation Solution
A semiconductor circuit structure with a composite shallow trench isolation region using high thermal conductivity materials like silicon, silicon carbide, boron nitride, or aluminum nitride, replacing traditional silicon dioxide to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional silicon dioxide (SiO2) shallow trench isolation is used, then manufacturing simplicity is maintained, but heat dissipation capability is insufficient leading to elevated junction temperatures
Solution Approach 1:
The patent changes the material parameter of the shallow trench isolation from silicon dioxide to semiconductor material with higher thermal conductivity, directly addressing the heat dissipation issue while maintaining the isolation function
Solution Approach 2:
The patent uses composite shallow trench isolation structure combining semiconductor material with high thermal conductivity properties, creating a material that simultaneously provides electrical isolation and superior heat dissipation capability
2Productivity
If transistor dimensions are scaled down to increase integration density, then integration capacity is improved, but the percentage of oxide coverage increases reducing thermal dissipation capability
Solution Approach 1:
The patent changes the thermal conductivity parameter of the isolation material to compensate for the increased oxide coverage percentage resulting from transistor scaling, maintaining effective heat dissipation despite higher integration density
3Temperature
If external heat removal methods such as liquid cooling are used, then heat dissipation is improved, but manufacturing cost and system complexity increase significantly
Solution Approach 1:
The patent enables the semiconductor device to dissipate heat through its own integrated shallow trench isolation structure, eliminating the need for external cooling systems and achieving self-service heat management
Solution Approach 2:
The shallow trench isolation structure simultaneously performs electrical isolation and thermal management functions, making the isolation structure multi-functional and eliminating the need for separate cooling components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly reduces transistor junction temperatures, enabling efficient heat dissipation without additional costs, thus supporting higher integration densities and performance.
Implementation Method 1
the inner section includes a first portion with a thermal conductivity semiconductor material... a thermal conductivity of the thermal conductivity semiconductor material is higher than that of SiO2
Data Source
AI summary
A semiconductor circuit structure includes a semiconductor substrate; a first set of active regions within the semiconductor substrate; and a fist shallow trench isolation (STI) region surrounding the first set of the active regions. Wherein the first STI region includes an inner section disposed within a gap among the first set of active regions and an outer section not disposed within the gap. Wherein the inner section includes a first portion with a thermal conductivity semiconductor material and a second portion without the thermal conductivity semiconductor material, and a thermal conductivity of the thermal conductivity semiconductor material is higher than that of SiO2.