Composite Intervening Structure for 3D Optical Semiconductor Stacks

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Solution Overview

Problem

The scaling down of optical semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly in signal transfer and energy consumption.

Innovation Solution

The design incorporates a logic die, a memory die, and a sensor die with specific inter-die and intra-die vias that electrically couple to simplify the sensor die's fabrication and reduce signal path length, allowing for efficient signal transfer and storage of intermediate processing signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the sensor die includes complex circuits for signal processing, then the processing capability is improved, but the fabrication complexity and device complexity increase

Engineering Contradiction:
Improvesignal processing capabilityVSAvoidsensor die fabrication complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The device is divided into three separate functional dies: sensor die (for light sensing), memory die (for signal storage), and logic die (for signal processing). This segmentation allows each die to be optimized independently, simplifying the sensor die fabrication while maintaining comprehensive signal processing capability through the logic die.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The memory die acts as an intermediary between the sensor die and logic die. It receives raw signals from the sensor die via inter-die vias and stores them temporarily, allowing the logic die to process signals without requiring complex circuits on the sensor die itself.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If the signal path between sensor die and logic die is lengthened for intermediate processing, then the processing stages are improved, but the energy consumption increases

Engineering Contradiction:
Improveintermediate processing capabilityVSAvoidsignal transfer energy consumption
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The signal transfer is optimized by stacking dies vertically in a 3D configuration rather than placing them side-by-side in 2D. This vertical arrangement significantly shortens the physical distance signals must travel between sensor, memory, and logic functions, reducing energy consumption while maintaining multi-stage processing capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If the optical semiconductor device is scaled down to improve computing ability, then the integration density is improved, but the quality, yield, and reliability deteriorate

Engineering Contradiction:
Improvecomputing abilityVSAvoiddevice quality and yield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

By segmenting the device into separate functional dies that can be fabricated independently using optimized processes for each function, the patent achieves high integration density through 3D stacking while maintaining high yield and reliability. Each die can be manufactured with process parameters optimized for its specific function, avoiding the compounding defects that would result from scaling down a monolithic integrated circuit.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12046620B2Optical semiconductor device with composite intervening structure
Publication Date: 2024.07.23 NAN YA TECH
  • US12046620B2 patent drawing
  • US12046620B2 patent drawing
  • US12046620B2 patent drawing

AI summary

The present application provides an optical semiconductor device with a composite intervening structure. The optical semiconductor device includes a logic die including a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and including a memory cell area and a memory peripheral area, and a first inter-die via positioned in the memory peripheral area and electrically connected to the logic peripheral circuit area; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area and electrically coupled to the logic peripheral circuit area through the first inter-die via, and a second intra-die via positioned in the sensor peripheral area. The intervening structure is disposed on the back surface of the memory die.