Composite Substrate with Amorphous Metal Interlayer for Crystallinity
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Solution Overview
Problem
The existing silicon-on-sapphire (SOS) structure technique for reducing parasitic capacitance in semiconductor devices suffers from lattice defects due to differences in lattice structure between silicon and sapphire, which affects the crystallinity of the silicon substrate.
Innovation Solution
A composite substrate is created with a silicon substrate bonded to an electrical insulating support substrate using a metal layer, where the silicon substrate includes regions with an amorphous form containing silicon and metal, reducing lattice defects and improving crystallinity. The manufacturing process involves forming dent portions on the silicon substrate, bonding with the support substrate, and heating to aggregate the metal layer, forming an amorphous form that enhances adhesion and reduces diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon-on-sapphire (SOS) structure is used to decrease parasitic capacitance, then parasitic capacitance is reduced, but lattice defects occur due to the difference in lattice structure between silicon and sapphire
Solution Approach 1:
A metal layer is introduced as an intermediary between the silicon substrate and sapphire support substrate. This metal layer serves as a buffer that accommodates the lattice mismatch between silicon and sapphire, preventing lattice defects while maintaining the low parasitic capacitance benefit of the SOS structure.
Solution Approach 2:
The invention creates a composite structure consisting of silicon substrate, metal layer, and sapphire support substrate. This composite material approach allows combining the advantages of different materials (low capacitance of SOS structure) while mitigating their disadvantages (lattice mismatch) through the metal interlayer.
2Manufacturing precision
If a metal layer is added between silicon substrate and sapphire support substrate, then lattice defects are reduced and crystallinity is improved, but device complexity increases
Solution Approach 1:
The bonding interface between silicon and sapphire is segmented by introducing a metal layer. This segmentation allows each material to maintain its own crystal structure independently, with the metal layer serving as a separate functional unit that handles the interface compatibility issues.
3Strength
If the metal layer is heated to form an amorphous form containing silicon and metal, then adhesion strength is improved and diffusion is reduced, but manufacturing process complexity increases
Solution Approach 1:
The metal layer undergoes a phase transition from crystalline to amorphous state through heating. This phase transition is controlled to occur after bonding, creating an amorphous silicon-metal alloy that provides superior adhesion and acts as a diffusion barrier while maintaining structural integrity.
Solution Approach 2:
The bonding between silicon substrate and sapphire support is performed first, establishing the basic structure. The heating process to form the amorphous metal layer is then applied as a subsequent treatment, allowing the bonding interface to be established before modifying the metal layer's physical state for enhanced adhesion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a composite substrate and electronic component with excellent crystallinity, improved adhesion strength, and reduced parasitic capacitance, effectively addressing the lattice defect issues in existing SOS structures.
Implementation Method 1
heating the support substrate and the silicon substrate bonded with each other to form an amorphous form containing silicon and a metal
Data Source
AI summary
A composite substrate having silicon substrate with excellent crystallinity and a method of manufacturing the composite substrate and an electronic component using the composite substrate are provided. A composite substrate (1) is configured to bond a support substrate (10) having electrical insulating property, and a silicon substrate (20) which is overlaid on the support substrate (10). The semiconductor substrate (20) of the composite substrate (1) includes a plurality of first regions (20x) in which a device function unit functioning as a semiconductor device is formed, and a second region (20y) located between these first regions (20x). In the semiconductor substrate (20) of the composite substrate (1), an amorphous form (22) containing silicon and a metal is present in the second region (20y).