Composite Substrate Bonding to Protect DBR Layer Stability
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Solution Overview
Problem
High-temperature epitaxial processes used in LED manufacturing can decompose the DBR layer, reducing its stability and requiring costly and complex preparation methods.
Innovation Solution
A composite substrate is developed with a DBR layer integrated into a base, where a growing substrate is bonded using a lower-temperature process, and optionally a protecting layer is added to enhance stability and transparency, reducing the risk of DBR layer decomposition and simplifying the preparation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-temperature epitaxial process is used to prepare structural layers on the DBR layer, then the LED device structure can be formed, but the DBR layer decomposes and its stability is reduced
Solution Approach 1:
The patent divides the substrate into two separate parts: a base substrate where the DBR layer is prepared, and a separate growing substrate where the LED device structure is epitaxially grown. This segmentation allows the DBR layer to be prepared at low temperature on the base substrate, avoiding decomposition, while still enabling high-temperature epitaxial growth on the separate growing substrate. The two substrates are then bonded together to form the complete device structure.
Solution Approach 2:
The patent introduces a growing substrate as an intermediary component between the base substrate (with DBR layer) and the LED device structure. This intermediary growing substrate serves as the platform for high-temperature epitaxial growth, protecting the DBR layer on the base substrate from direct exposure to high temperatures while still enabling the formation of the LED device structure.
2Reliability
If DBR layer is prepared on base substrate, then stability is improved, but the preparation process becomes complex and costly
Solution Approach 1:
The patent segments the preparation process into two independent stages: first preparing the DBR layer on the base substrate at low temperature, then separately preparing the LED device structure on the growing substrate through epitaxial growth. This segmentation simplifies each individual process while maintaining overall device performance, avoiding the complexity of integrating both processes into a single high-temperature step.
Solution Approach 2:
The patent performs preliminary preparation of the DBR layer on the base substrate before the epitaxial growth of the LED device structure. By preparing the DBR layer in advance at low temperature and then bonding the pre-prepared base substrate with the separately grown LED structure, the process avoids the complexity and cost of performing both operations simultaneously under high-temperature conditions.
3Reliability
If protecting layer is added to cover DBR layer, then stability and transparency are enhanced, but the device structure becomes more complex
Solution Approach 1:
The growing substrate serves multiple functions: it acts as a platform for high-temperature epitaxial growth of the LED device structure, serves as a protecting layer covering the DBR layer during the epitaxial process, and can be bonded to the base substrate to form the final device. This multi-functionality reduces the need for additional separate protecting layers, simplifying the overall device structure while maintaining stability and transparency.
Data Source
AI summary
The present disclosure provides a composite substrate and semiconductor device structure, where the composite substrate includes: a base; a DBR layer on a side of the base; and a growing substrate on a side of the DBR layer far from the base. In the present disclosure, the growing substrate can be prepared on the top layer of the DBR layer by a bonding process, which requires a lower temperature than the high-temperature epitaxial process, reducing the risk of DBR layer decomposition during the preparation of the growing substrate, thereby, improving the stability of the DBR layer.