Composite Substrate Gradient Doping for 5G Signal Crosstalk
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Solution Overview
Problem
High-resistance composite substrates used in 5G applications have mechanical strength issues, tend to warp and crack during epitaxy, and are costly, while low-resistance substrates suffer from carrier crosstalk effects that interfere with signal transmission.
Innovation Solution
A composite substrate with a silicon-containing layer and an epitaxial layer, where the distribution concentration of group V and group III atoms increases towards each other, forming a gradient to create a high resistance value through heat treatments and thinning processes, reducing carrier crosstalk and maintaining mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a high-resistance composite substrate is used, then carrier crosstalk is reduced and signal transmission is improved, but mechanical strength decreases causing warping and cracking during epitaxy
Solution Approach 1:
The patent applies local quality by creating a silicon-containing layer with non-uniform group V atom distribution (higher concentration near the epitaxial layer) and forming localized high-resistance regions through specific doping profiles. This allows the substrate to have high resistance where needed (at the interface with epitaxial layer) while maintaining overall mechanical strength through the bulk structure.
Solution Approach 2:
The patent uses composite materials by combining a silicon-containing layer with group V atoms (phosphorus, arsenic, or antimony) and an epitaxial layer with group III atoms (aluminum, gallium, or indium) to create a multi-layer structure. This composite structure achieves both high resistance and mechanical strength by distributing functional requirements across different layers.
2Object-affected harmful factors
If a high-resistance composite substrate is used, then signal transmission is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies parameter changes by controlling the concentration parameters of group V atoms in the silicon-containing layer and group III atoms in the epitaxial layer. By optimizing these concentration gradients and using heat treatment processes, the patent achieves high resistance values without requiring expensive high-resistance substrate materials, thereby reducing manufacturing costs while maintaining signal transmission quality.
3Object-affected harmful factors
If a high-resistance composite substrate is used, then resistance value increases, but epitaxial layer thickness is limited due to warping and cracking
Solution Approach 1:
The patent applies preliminary action by pre-forming the silicon-containing layer with appropriate group V atom distribution and performing heat treatment before growing the epitaxial layer. This preliminary preparation creates a buffer structure that can accommodate thermal stress and prevent warping/cracking during subsequent epitaxial growth, enabling thicker epitaxial layers to be grown on high-resistance substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases the resistance value of the composite substrate, reducing carrier crosstalk and maintaining high mechanical strength, while lowering costs, enabling thicker epitaxial growth without warping or cracking.
Implementation Method 1
a distribution concentration of the plurality of group V atoms in the first silicon-containing layer increases as getting closer to the first epitaxial layer, and a distribution concentration of the plurality of group III atoms in the first epitaxial layer increases as getting closer to the first silicon-containing layer
Data Source
AI summary
A composite substrate is provided in some embodiments of the present disclosure, which includes a substrate, an insulation layer, a first silicon-containing layer and a first epitaxial layer. The insulation layer is disposed on the substrate. The first silicon-containing layer is disposed on the insulation layer, in which the first silicon-containing layer includes a plurality of group V atoms. The first epitaxial layer is disposed on the first silicon-containing layer, in which the first epitaxial layer includes a plurality of group III atoms. A distribution concentration of the group V atoms in the first silicon-containing layer increases as getting closer to the first epitaxial layer, and a distribution concentration of the group III atoms in the first epitaxial layer increases as getting closer to the first silicon-containing layer. A method of manufacturing a composite substrate is also provided in some embodiments of the present disclosure.