Semiconductor substrate
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Solution Overview
Problem
Existing semiconductor substrates for power semiconductor modules face challenges with thermal conductivity and resistance to partial discharging effects, leading to potential degradation and reduced lifetime.
Innovation Solution
A semiconductor substrate is designed with a dielectric insulation layer comprising a first material with high thermal conductivity and insulation strength, combined with a second electrically conducting or semiconducting material, such as ZrN, distributed within the first material to enhance electrical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a structured first metallization layer is used on the substrate, then electrical field distribution becomes non-homogeneous, but this leads to local field spikes and partial discharging effects that degrade the substrate layer and reduce module lifetime
Solution Approach 1:
The patent changes the physical and chemical parameters of the substrate material by incorporating specific additives (metal oxides such as ZnO, TiO2, SiO2 in controlled amounts) into the ceramic matrix. This modifies the electrical properties of the substrate to increase its resistance against partial discharging effects while maintaining mechanical integrity and thermal conductivity.
Solution Approach 2:
The patent creates a composite ceramic material by combining the base ceramic (alumina or aluminum nitride) with metal oxide additives. This composite structure allows the substrate to simultaneously achieve high thermal conductivity, electrical insulation, and enhanced resistance to partial discharging effects that would not be possible with a single material.
2Temperature
If heat dissipation through the substrate is improved, then thermal management is enhanced, but the substrate must maintain high electrical insulation strength to prevent partial discharging
Solution Approach 1:
The patent employs composite ceramic materials that combine high thermal conductivity phases (aluminum nitride, alumina) with metal oxide additives. This composite structure enables the substrate to simultaneously achieve superior heat dissipation properties while maintaining high electrical insulation strength to prevent partial discharging effects.
Solution Approach 2:
The patent applies different material compositions and structures to different regions or aspects of the substrate. The base material provides thermal conductivity and insulation, while metal oxide additives are strategically incorporated to enhance resistance against partial discharging in areas where electrical field stress is highest, creating localized property optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution improves thermal conductivity and increases resistance to partial discharging effects, thereby enhancing the reliability and longevity of power semiconductor modules.
Implementation Method 1
Heat that is generated by the controllable semiconductor components is dissipated through the substrate to the base plate or to a heat sink
Implementation Method 2
an insulation strength of between 15 and 50 kV/mm
Data Source
Figure 1~3
Figure 4~6
Figure 7~8
AI summary
A semiconductor substrate (10) comprises a dielectric insulation layer (110), and a first metallization layer (111) attached to the dielectric insulation layer (110). The dielectric insulation layer (110) comprises a first material (40) having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and a second electrically conducting or semiconducting material (41), wherein the second material (41) is evenly distributed within the first material (40).