Composite Transport Layers for Halide Diffusion Blocking in Perovskites
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Solution Overview
Problem
Halide perovskite devices face stability issues due to halide diffusion, which corrodes metal components, and existing solutions like inorganic blocking layers have chemical incompatibility and defect transmission problems.
Innovation Solution
A composite material with multiple layers of organic and inorganic semiconductors is used, where at least one inorganic layer includes metal oxides, chalcogenides, or 2D materials, and organic layers are treated with reductants to create a barrier that prevents halide diffusion, allowing for non-noble metal use and improved stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single inorganic blocking layer is used to prevent halide diffusion, then the stability of the device is improved, but chemical incompatibility issues arise and defects in the inorganic layer rapidly transmit halide or corroded metal cations
Solution Approach 1:
The patent applies composite materials by creating a hybrid organic-inorganic blocking layer where organic semiconductor materials are combined with inorganic blocking materials. This composite structure allows the organic component to provide chemical compatibility and defect tolerance while the inorganic component provides effective halide blocking, thus resolving the contradiction between stability improvement and chemical incompatibility/defect transmission.
Solution Approach 2:
The organic semiconductor material serves as an intermediary between the perovskite active layer and the inorganic blocking layer. This intermediary layer provides a chemically compatible interface that prevents direct chemical reactions while still allowing the inorganic layer to perform its halide blocking function, thereby eliminating chemical incompatibility issues.
2Reliability
If inorganic layers are used to block halide diffusion, then halide blocking capability is improved, but the layers cannot be directly deposited on top of the perovskite due to chemical incompatibility
Solution Approach 1:
The organic semiconductor layer acts as an intermediary that enables the deposition of inorganic blocking layers on perovskite surfaces. The organic material provides a chemically compatible interface that allows subsequent inorganic layer deposition without direct chemical incompatibility between the perovskite and inorganic materials, thus resolving the manufacturing difficulty.
Solution Approach 2:
The blocking layer is segmented into multiple functional sub-layers: an organic semiconductor layer that provides chemical compatibility and interface quality, and an inorganic layer that provides halide blocking capability. This segmentation allows each layer to perform its specific function optimally without the chemical incompatibility issues that would arise from direct deposition.
3Quantity of substance
If non-noble metals are used as current collectors or wire leads, then device cost is reduced, but the metals are rapidly corroded by halide permeation
Solution Approach 1:
The harmful halide diffusion pathway to the metal electrodes is extracted and blocked by the composite blocking layer. By removing the halide transport pathway, non-noble metals are protected from corrosion while maintaining cost benefits, thus resolving the contradiction between cost reduction and corrosion resistance.
Solution Approach 2:
The patent enables the use of cheap non-noble metals by providing a protective barrier that prevents their degradation. The composite blocking layer acts as a sacrificial protective element that prevents halide reach the inexpensive metal electrodes, allowing cost-effective device construction without sacrificing metal durability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite material effectively blocks halide diffusion, enhancing the stability of perovskite devices and enabling the use of less expensive non-noble metals, thereby improving the longevity and performance of halide perovskite electronic devices.
Implementation Method 1
at least one inorganic layer may be treated with a reductant (such as Yb or Al) to, e.g., assist in stabilizing the oxide against a halide (such as iodine or bromine)
Data Source
AI summary
Compositions of matter and devices using those compositions are provided, which can, e.g., impede or restrict the migration of halides from a halide perovskite active layer. The composite material may include n layers of semiconductors, wherein n ≥ 2. Each layer of semiconductors may contain (i) one or more organic semiconductor layers and one or more inorganic semiconductor layer in contact with the one or more organic semiconductor layers, (ii) one or more composite semiconductor layers, each composite semiconductor layer containing an organic material and inorganic material, or (iii) a combination thereof.