Composite Wafer Singulation Using Sacrificial Trenches
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Solution Overview
Problem
Current semiconductor wafer processing methods face challenges in efficiently separating semiconductor devices while minimizing damage and ensuring reliable metallization structures, particularly in forming orthogonal grid patterns and maintaining mechanical stability during thinning and singulation.
Innovation Solution
The method involves forming trenches in non-device regions of a semiconductor wafer, filling them with a sacrificial material or insulating material, and then thinning the wafer to expose the material, which is used to separate the devices while maintaining edge stability and preventing crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the wafer is thinned to separate semiconductor devices, then productivity is improved, but mechanical stability deteriorates causing crack propagation
Solution Approach 1:
A sacrificial layer is formed beforehand in the non-device regions before wafer thinning. This sacrificial layer acts as a cushioning element that prevents crack propagation during the thinning process, allowing the wafer to be thinned to the desired thickness without compromising mechanical stability. The sacrificial layer is later removed to complete device separation.
Solution Approach 2:
The sacrificial layer serves as an intermediary material between the device regions during wafer thinning. It mediates the mechanical stress distribution, preventing direct stress concentration at the device edges that would cause cracking. The intermediary layer is temporarily present during processing and is removed after serving its protective function.
2Reliability
If trenches are formed and filled with sacrificial material to prevent crack propagation, then reliability is improved, but device complexity increases
Solution Approach 1:
The formation of trenches and filling with sacrificial material is merged with the existing wafer processing sequence. The sacrificial layer formation is integrated into the standard fabrication flow, combining multiple functions (crack prevention, edge stabilization, and separation) into a single integrated process step rather than adding separate complex operations.
3Strength
If edge regions are embedded in polymer layer, then mechanical stability is improved, but manufacturing precision deteriorates due to material removal challenges
Solution Approach 1:
The sacrificial layer is selectively extracted from the non-device regions after serving its protective function. This extraction is performed through targeted removal processes that precisely eliminate only the sacrificial material while preserving the device regions and their metallization structures, thereby achieving both edge stability and manufacturing precision.
Data Source
AI summary
An electronic component includes a semiconductor device including a semiconductor die including a first surface, the first surface including a first metallization structure and edge regions surrounding the first metallization structure, a second surface opposing the first surface and including a second metallization structure, and side faces extending between the first surface and the second surface, wherein the edge regions of the first surface and portions of the side faces are covered by a first polymer layer, wherein the electronic component further includes a plurality of leads and a plastic housing composition, wherein the first metallization structure is coupled to a first lead and the second metallization structure is coupled to a second lead of the plurality of leads.