Compositional Inhomogeneous Regions in Semiconductor Layers
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Solution Overview
Problem
Current deep ultraviolet light emitting devices have low wall plug operating efficiencies, and existing semiconductor materials like InGaN and AlGaN suffer from high dislocation densities and nonradiative recombination, limiting their emission efficiency despite carrier localization effects.
Innovation Solution
Incorporating compositional inhomogeneous regions in semiconductor layers with a band gap difference of at least thermal energy and a characteristic size smaller than the inverse of dislocation density, enhancing radiative recombination and reducing nonradiative recombination time by preventing electrons from reaching threading dislocation cores.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If compositional inhomogeneous regions are incorporated in semiconductor layers, then radiative recombination is enhanced and internal quantum efficiency is improved, but device complexity increases due to controlled compositional variations
Solution Approach 1:
The patent applies local quality by creating compositional inhomogeneous regions with specific band gap differences (at least thermal energy) and characteristic sizes (smaller than inverse dislocation density) within the semiconductor layer. These localized regions with different compositional properties enhance radiative recombination while maintaining control over the overall device structure.
2Reliability
If compositional inhomogeneous regions are used to prevent electrons from reaching threading dislocation cores, then nonradiative recombination is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs parameter changes by specifying precise compositional parameters for the inhomogeneous regions, including band gap difference (at least thermal energy) and characteristic size (smaller than inverse dislocation density). These parameter specifications enable controlled modification of electron transport and recombination behavior while providing guidance for manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves internal quantum efficiency and overall reliability of the devices by increasing radiative recombination and delaying nonradiative recombination, leading to enhanced performance in ultraviolet light emitting diodes.
Implementation Method 1
carrier localization and lead to an enhancement in the radiative efficiency despite the high dislocation density
Implementation Method 2
the luminescence occurs due to radiative recombination of carriers in the self-assembled nanometer-scale localized compositionally inhomogeneous regions
Data Source
AI summary
A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.