Compound Layer Formation Using Laser-Evaporated Elements
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Solution Overview
Problem
Existing methods for forming thin films from compounds result in high impurity levels due to the use of 3N purity compound sources, limiting their reproducibility and effectiveness.
Innovation Solution
A method involving thermal laser evaporation of solid or liquid elements in a gaseous environment, where the process chamber is filled with a process gas that reacts with evaporated or sublimated elements to form a compound layer on a substrate, controlling stoichiometry through flux ratios and gas pressures, and using non-condensing gases to minimize impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If compound sources with 3N purity (99.9%) are used to form thin films, then the manufacturing process is simple and cost-effective, but the impurity level in the deposited layer is high
Solution Approach 1:
The process separates the source material from the deposition environment by using elemental sources instead of pre-formed compounds. The source chamber and reaction chamber are segmented into distinct zones where pure elements are evaporated and then react with process gas in a controlled environment, preventing impurity incorporation while maintaining manufacturing simplicity
Solution Approach 2:
The patent changes the purity parameter from 3N (99.9%) compound sources to higher purity elemental sources, and controls the reaction conditions (temperature, pressure, gas flow) to achieve desired stoichiometry. This parameter change enables ultra-pure thin film deposition while keeping the process straightforward
2Manufacturing precision
If higher purity sources are used to reduce impurities, then the quality of the thin film improves, but the cost and complexity of the process increases
Solution Approach 1:
The patent introduces a process gas (oxygen, nitrogen, or other reactive gases) as an intermediary that facilitates the formation of compounds from elemental sources. This intermediary enables the use of simple elemental sources while achieving high-purity compound deposition through controlled chemical reactions in the reaction chamber
Solution Approach 2:
The patent replaces complex mechanical purification systems with a chemical reaction approach. Instead of mechanically purifying compound sources to high precision, the system uses elemental sources and relies on controlled chemical reactions with process gas to form pure compounds, simplifying the overall system complexity
3Manufacturing precision
If the process chamber is filled with process gas to enable compound formation, then the stoichiometry control improves, but the number of collisions and impurity deposition increases
Solution Approach 1:
The patent optimizes parameters such as process gas pressure, temperature, and flow rate to control the balance between stoichiometry formation and impurity deposition. By carefully adjusting these parameters, the system achieves desired compound composition while minimizing harmful collisions that would introduce impurities into the thin film
Solution Approach 2:
The patent creates different local environments in the chamber: a low-pressure zone near the source for evaporation and a controlled reaction zone where process gas is introduced. This local quality differentiation allows stoichiometry control without excessive collisions throughout the entire deposition path
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of ultra-pure thin films with controlled stoichiometry and reduced impurities, suitable for quantum components, by optimizing reaction conditions and minimizing collisions that lead to impurity deposition.
Implementation Method 1
irradiating the one or more sources with laser light in order to melt and/or sublimate and/or evaporate atoms and/or molecules of the source material present at least at a surface of the one or more sources
Implementation Method 2
irradiating the one or more sources with laser light in order to melt and/or sublimate and/or evaporate atoms and/or molecules of the source material
Implementation Method 3
irradiating the one or more sources with laser light in order to melt and/or sublimate and/or evaporate atoms and/or molecules of the source material
Implementation Method 4
reacting the melted and/or sublimated and/or evaporated atoms and/or molecules with the process gas in the process chamber and forming the layer of the compound on the substrate
Implementation Method 5
forming the layer of the compound on the substrate
Implementation Method 6
The invention provides the provision of an elementary source which is essentially solid or liquid at the process temperature where only a small fraction of it evaporates or sublimates per time unit due to irradiation by a laser. At the same time, the process chamber is filled with a process gas that on purpose reacts with the evaporated or sublimated element to form a compound. This compound is then deposited as a thin film or epitaxial thin film on the substrate.
Data Source
AI summary
The present invention relates to a method of forming a layer of a compound having a thickness selected in the range of a monolayer to several mm on a substrate, such as a single crystal wafer, the substrate being arranged in a process chamber comprising one or more sources of source material. The invention further relates to a compound optionally obtained by this method.