LIDAR sensor using compound semiconductor materials for vehicle apparatus
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Solution Overview
Problem
Conventional silicon-based CMOS image sensors and single-photonic avalanche diodes have limitations in detectable wavelength range and sensitivity, particularly at longer wavelengths.
Innovation Solution
The use of heteroepitaxy to deposit compound semiconductor materials on silicon substrates for photodetector circuits, enabling improved wavelength range and sensitivity through integration with CMOS technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based CMOS image sensors and SPADs are used, then manufacturing maturity and abundance are achieved, but detectable wavelength range and sensitivity at longer wavelengths are limited
Solution Approach 1:
The patent employs compound semiconductor materials (such as InGaAs, InP) grown on silicon substrates through heteroepitaxy. This composite structure combines the manufacturing advantages of silicon with the superior optoelectronic properties of compound semiconductors, enabling extended wavelength detection while maintaining compatibility with existing CMOS fabrication processes.
2Ease of manufacture
If silicon-based sensors are used, then manufacturing cost and availability are improved, but sensitivity at longer wavelengths deteriorates
Solution Approach 1:
The patent implements a heterogeneous structure where compound semiconductor layers are selectively grown on specific regions of the silicon substrate. This allows the sensor to have different material properties in different regions - silicon providing cost-effective manufacturing and compound semiconductors providing enhanced sensitivity for specific wavelength ranges, particularly in the short-wave infrared region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high-performance photodetector circuits with enhanced detectable wavelength range and sensitivity, facilitating applications in LIDAR, autonomous vehicles, and various imaging technologies.
Implementation Method 1
an image sensor or detector device configured to detect photons and convert them to electrical signals
Implementation Method 2
The use of heteroepitaxy to deposit compound semiconductor materials on silicon substrates for photodetector circuits
Data Source
AI summary
Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).