Large-Scale Compound Semiconductor Crystal Growth System
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Solution Overview
Problem
Current methods for growing large-size and long single crystals of compound semiconductors face challenges due to uneven temperature distribution and thermal convection in high-pressure environments, leading to defects and contamination issues, especially when increasing the crucible volume to manage raw material supply.
Innovation Solution
A scalable single crystal growth system with a multi-stage furnace body structure and independent raw material loading and injection systems, which allows for continuous or intermittent synthesis, enabling precise control of the crystal growth space and raw material supply to maintain optimal conditions and reduce thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the volume of the airtight space is increased to grow longer single crystals, then the crystal length is improved, but the temperature field uniformity deteriorates due to large convections
Solution Approach 1:
The airtight space is divided into multiple independent sealing spaces, each with controlled volume. This segmentation allows the overall system to accommodate long crystals while maintaining appropriate temperature field uniformity in each individual space by limiting convection effects.
Solution Approach 2:
The patent employs dynamic adjustment of the airtight space volume during the crystal growth process. The sealing space can be expanded or contracted based on the growth stage, allowing optimization of temperature field uniformity at different crystal lengths while continuing to grow longer crystals.
2Quantity of substance
If the crucible volume is increased to supply more raw materials, then the raw material supply is improved, but the temperature field control deteriorates
Solution Approach 1:
The raw material supply system is segmented into multiple independent injection systems, each with its own loading and injection apparatus. This allows sufficient raw material supply for large crystals while maintaining better temperature control in smaller, distributed injection zones rather than one large crucible.
Solution Approach 2:
The patent introduces an intermediary material supply mechanism where raw materials are injected through controlled injection systems into the crystal growth zone. This intermediary approach allows precise control of material addition while maintaining temperature field stability, avoiding direct heating of large crucible volumes.
3Quantity of substance
If multiple crucibles are used to increase raw material supply, then the raw material availability is improved, but the furnace body volume increases
Solution Approach 1:
Multiple raw material injection systems are nested within a compact configuration inside the furnace body. The injection systems are arranged in a space-efficient manner, allowing multiple material supply points without proportionally increasing the overall furnace volume.
Solution Approach 2:
The patent utilizes vertical arrangement and multi-level positioning of injection systems to maximize raw material supply capability within limited horizontal space. By organizing injection points in three-dimensional space efficiently, the system provides adequate raw material availability without requiring large furnace volume.
4Adaptability or versatility
If materials are supplied from outside the furnace body, then the raw material supply flexibility is improved, but the contamination risk increases
Solution Approach 1:
The patent employs sealed injection tubes and controlled injection mechanisms as intermediaries between the external material supply system and the internal crystal growth environment. This intermediary structure allows flexible material supply from outside while maintaining sealing to prevent contamination of the high-purity crystal growth zone.
Solution Approach 2:
The injection systems are designed to maintain inert or controlled atmosphere conditions throughout the material supply path. By preserving the inert environment from the external supply point through the injection mechanism into the growth zone, the system achieves both supply flexibility and contamination prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach facilitates the growth of high-quality, long single crystals by minimizing thermal convection, reducing defects, and preventing contamination, while allowing for flexible operation and adaptability in growing various semiconductor materials.
Implementation Method 1
the top of the innermost or outermost movable furnace body is sealed
Implementation Method 2
the raw material loading and injection system comprises a raw material loader, a resistance wire disposed around the raw material loader, a raw material injection tube in communication with the raw material loader, and a raw material loader top cover
Implementation Method 3
a resistance wire disposed around the raw material loader
Implementation Method 4
the uneven distribution of the temperature field in the airtight space and the increase of the space result in large convections in the thermal field
Implementation Method 5
a seed crystal rod and a seed crystal rod driving device are disposed on the movable furnace with the top sealed
Data Source
AI summary
A system and method for growing a large-size compound semiconductor single crystal belong to the field of single crystal preparation, in particular to a system and method for preparing a large-size, especially ultra-long compound semiconductor single crystal. The large-size single crystal growth system includes a crystal growth space control device and a raw material injection device within a furnace body. The raw materials are injected in the raw material synthesis and crystal growth processes, and the growth space is adjusted according to the length of the single crystal. Due to the existence of multiple times of necking treatment, it can reduce the thermal stress of the crystal itself, to prevent breakage as the crystal grows too long, while substantially reducing the generation of defects and the extension of the original defects during the multiple growth processes; and such structure can be free from the limitation of the size of high-pressure preparation apparatuses. The raw material loading and injection system can realize cooling of the loading and injection system to enable continuous synthesis or intermittent synthesis.