Compound Semiconductor Device with Segmented Insulating Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Compound semiconductor devices with a diamond layer on the surface of high electron mobility transistors (HEMTs) exhibit excellent heat dissipation but fail to achieve sufficient output current due to low two-dimensional electron gas (2DEG) concentration.
Innovation Solution
A compound semiconductor device structure incorporating a diamond insulating layer between the gate and drain electrodes and a second insulating layer with reduced compressive stress between the gate and source electrodes, applied to a semiconductor laminate structure, enhances 2DEG concentration and heat dissipation, improving output current and pressure resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a diamond layer is provided on the surface of the HEMT to dissipate heat, then heat dissipation is improved, but output current becomes insufficient due to low 2DEG concentration
Solution Approach 1:
The insulating layer is divided into two distinct segments: a first insulating layer made of diamond material between the gate electrode and drain electrode for heat dissipation, and a second insulating layer with different material composition between the gate electrode and source electrode for enhancing 2DEG concentration. This segmentation allows each layer to optimize its function independently, resolving the contradiction between heat dissipation and output current.
2Quantity of substance
If compressive stress is applied to the electron supply layer, then 2DEG concentration increases, but pressure resistance decreases
Solution Approach 1:
Different regions of the insulating structure are assigned different material properties: the first insulating layer (diamond) provides high pressure resistance and thermal conductivity in the drain region, while the second insulating layer provides appropriate compressive stress in the source region. This local differentiation of material quality allows simultaneous achievement of high 2DEG concentration and pressure resistance in different locations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure increases 2DEG concentration under the second insulating layer, leading to higher output current and improved pressure resistance, while efficient heat dissipation is maintained through the diamond layer, surpassing the limitations of diamond layer placement between the gate and source electrodes.
Implementation Method 1
a structure in which a diamond layer is provided on the surface of the HEMT is proposed to dissipate the heat generated by the HEMT to the outside
Implementation Method 2
a two-dimensional electron gas (2DEG) of high concentration is generated in the electron transit layer as an effect of piezoelectric polarization and spontaneous polarization in GaN
Implementation Method 3
a two-dimensional electron gas (2DEG) of high concentration is generated in the electron transit layer as an effect of piezoelectric polarization and spontaneous polarization in GaN
Data Source
AI summary
A compound semiconductor device includes a compound semiconductor laminate structure including an electron transit layer and an electron supply layer, a gate electrode, a source electrode, and a drain electrode that are formed over the electron supply layer, a first insulating layer of diamond formed between the gate electrode and the drain electrode over the compound semiconductor laminate structure, and a second insulating layer formed between the gate electrode and the source electrode over the compound semiconductor laminate structure, wherein a positive compressive stress is applied from the first insulating layer to the electron supply layer, and a compressive stress from the second insulating layer to the electron supply layer is smaller than the compressive stress from the first insulating layer to the electron supply layer.