Compound Semiconductor Solar Cell Defect Removal
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Solution Overview
Problem
Compound semiconductor solar cells face efficiency deterioration due to defects in the semiconductor layer, which are difficult to remove without degrading the material or causing safety issues, and existing defect removal processes are complex and costly.
Innovation Solution
A method involving the formation of a defect-removed portion as an empty space in the semiconductor layer using a mask layer and laser exposure followed by etching, which simplifies the manufacturing process and enhances stability without scattering materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a process is added to remove defects in the compound semiconductor layer, then the efficiency of the solar cell is improved, but the properties of the compound semiconductor layer are degraded or unwanted changes occur
Solution Approach 1:
The patent extracts and removes only the defective portions of the compound semiconductor layer through a targeted etching process. By using a mask layer to define the defect locations and selectively etching only those areas, the invention removes harmful defects while preserving the bulk properties and composition of the compound semiconductor layer, thus improving efficiency without causing widespread degradation.
2Reliability
If a process is added to remove defects in the compound semiconductor layer, then the efficiency of the solar cell is improved, but material is scattered during the process causing safety problems
Solution Approach 1:
The patent introduces a mask layer as an intermediary between the defect identification and the etching process. This mask layer allows for precise control of the etching operation, confining the removal process to only the defective areas. The mask layer prevents material scattering by containing the etching action within defined boundaries, thereby eliminating safety hazards associated with uncontrolled material dispersal.
3Reliability
If a separate process or stabilizing device is added to remove defects, then the efficiency of the solar cell is improved, but the process becomes complicated or equipment burden increases
Solution Approach 1:
The patent merges the defect removal process with the existing manufacturing workflow by integrating mask layer formation and selective etching into the standard solar cell production sequence. Rather than introducing a completely separate complex system, the invention combines multiple functions (defect identification, masking, and selective removal) into a unified process flow that can be implemented using conventional equipment, thus improving efficiency without significantly increasing process or equipment complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents issues caused by defects, improves solar cell efficiency, and reduces equipment costs by simplifying the manufacturing process while maintaining structural stability.
Implementation Method 1
forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists
Implementation Method 2
etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer
Data Source
AI summary
Disclosed is a method of manufacturing a compound semiconductor solar cell including forming a compound semiconductor layer; and forming a defect-removed portion formed of an empty space through removing a portion of the compound semiconductor layer where a defect existed prior to removal. The forming of the defect-removed portion includes forming a mask material layer on the compound semiconductor layer; forming a mask layer through forming an opening at a portion of the mask material layer corresponding to the portion of the compound semiconductor layer where the defect exists; and etching the compound semiconductor layer for removing the portion of the compound semiconductor layer where the defect exists through the opening of the mask layer to form the defect-removed portion.