Compressive Silicon Gapfill Films for Crack-Resistant 3D NAND
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor processing methods struggle to deposit silicon-containing films with high compressive stress and reduced shrinkage, particularly in 3D NAND structures, where tensile films prone to cracking and shrinkage are common, limiting the ability to prevent structural flaws and defects in final devices.
Innovation Solution
The method involves using specific silicon-containing precursors like silane, disilane, or trisilane, and an inert precursor such as argon, with a plasma-free deposition process and subsequent plasma treatment to increase compressive stress and reduce shrinkage, forming films with characteristics suitable for gapfilling applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If conventional deposition methods are used to form silicon-containing films, then the films can be deposited, but the films exhibit tensile stress and are prone to cracking and shrinkage during annealing
Solution Approach 1:
The patent changes the deposition parameters including using specific precursors (silane, disilane, trisilane), controlling pressure (less than 350 Torr), temperature (less than 600°C), and implementing plasma-free conditions to deposit films with compressive stress greater than -200 MPa, which prevents cracking during subsequent annealing processes
Solution Approach 2:
The patent applies a plasma treatment with inert precursor (argon) before annealing to modify the film properties in advance. This preliminary plasma exposure prepares the film to withstand the thermal stress of annealing by reducing shrinkage and preventing crack formation
2Manufacturing precision
If device sizes are reduced and aspect ratios are increased, then more advanced integrated circuits can be produced, but maintaining dimensions of structures during processing becomes more difficult
Solution Approach 1:
The patent uses controlled deposition parameters (pressure less than 350 Torr, temperature less than 600°C, plasma-free conditions) to deposit films with specific compressive stress characteristics that maintain structural dimensions during subsequent processing, enabling precise feature size control in high aspect ratio structures
Solution Approach 2:
The plasma treatment with inert precursor is applied before annealing to pre-condition the film, reducing shrinkage and stabilizing the dimensions of high aspect ratio structures before they undergo thermal processing
3Volume of moving object
If materials are deposited to fill large gaps in 3D NAND structures, then the structures can be formed, but the deposited films are prone to cracking and defects
Solution Approach 1:
The patent employs specific deposition parameters including plasma-free conditions, controlled pressure (less than 350 Torr), and temperature control (less than 600°C) to deposit silicon-containing films with compressive stress that can fill large gaps in 3D NAND structures without cracking or forming defects
Solution Approach 2:
The plasma treatment with inert precursor (argon) is applied as a preliminary step before annealing to modify the film properties, reducing shrinkage and preventing crack formation in the gapfilled regions, thereby ensuring defect-free quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the deposition of silicon-containing films with high compressive stress and minimal shrinkage, preventing cracking and defects during further processing, such as anneal operations, thereby enhancing the integrity of semiconductor structures.
Implementation Method 1
forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa
Implementation Method 2
The methods may include annealing the substrate at a temperature of greater than or about 700° C. Subsequent to annealing the silicon-containing material, the silicon-containing material may be characterized by a shrinkage of less than or about 5%
Data Source
AI summary
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700° C.