Computational Metrology Correction for Patterning Process Control

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Solution Overview

Problem

Current device manufacturing processes face challenges in accurately correcting patterning processes due to variations in substrate quality and processing conditions, leading to inconsistencies in overlay, critical dimension, and focus, which affect the overall performance and yield of semiconductor devices.

Innovation Solution

A method is introduced that utilizes a hardware computer system to select a representative quality from a plurality of parameter maps generated from metrology data and apparatus data, applying corrections based on weighted averaging or correction potential to improve patterning process accuracy for subsequent substrates, including overlay, critical dimension, and focus adjustments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If corrections are applied based on all parameter maps, then manufacturing precision improves, but device complexity increases

Engineering Contradiction:
Improvepatterning process accuracyVSAvoidcorrection system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts only the representative quality from the plurality of parameter maps that best reflects the actual patterning process variations. Instead of processing all parameter maps, the system identifies and selects the most relevant one based on correlation with measured substrate qualities, thereby reducing computational complexity while maintaining correction accuracy.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies local quality by tailoring corrections specifically to the representative parameter map that corresponds to the actual substrate conditions. Rather than applying uniform corrections across all parameter maps, the system focuses computational resources on the specific map that reflects the real process variations, optimizing the correction application.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If multiple parameter maps are processed, then measurement precision improves, but loss of time increases

Engineering Contradiction:
Improvesubstrate quality assessment accuracyVSAvoidcorrection determination time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent extracts only the essential information needed for accurate correction by selecting a single representative parameter map from the plurality of available maps. This extraction approach maintains measurement precision by choosing the map with highest correlation to actual substrate quality, while dramatically reducing processing time compared to analyzing all maps.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent performs preliminary action by pre-identifying which parameter map is most likely to be representative based on correlation metrics calculated from previously measured substrate qualities. This preliminary selection is done before the actual correction process, enabling faster real-time corrections without sacrificing measurement precision.

Inventive Principle:
Principle #10Preliminary action

3Manufacturing precision

If corrections are applied to all substrates, then manufacturing precision improves, but productivity decreases

Engineering Contradiction:
Improvepatterning consistencyVSAvoidsubstrate processing throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent extracts corrections only for substrates that require them, based on the representative parameter map analysis. By identifying which substrates exhibit significant deviations from target specifications and applying corrections only to those cases, the system maintains manufacturing precision while avoiding unnecessary processing steps that would reduce productivity.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies partial action by selectively correcting only the substrates that demonstrate quality issues in the representative parameter map, rather than applying corrections uniformly to all substrates. This approach maintains precision for affected substrates while preserving throughput by skipping correction steps for substrates that are already within specification.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS20220365446A1Computational metrology based correction and control
Publication Date: 2022.11.17 ASML NETHERLANDS BV
  • US20220365446A1 patent drawing
  • US20220365446A1 patent drawing
  • US20220365446A1 patent drawing

AI summary

A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.