Concave FET Biosensor Structure for Reliable Biomolecule Detection

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Solution Overview

Problem

Biosensors based on semiconductor technology face reliability issues due to sensitivity challenges, particularly in bio-MEMS devices.

Innovation Solution

A semiconductor structure is developed with a biosensor configuration that includes a concave sensing portion capacitively coupled to a field effect transistor (FET), enhancing sensitivity by placing biomolecules closer to the FET for improved detection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional biosensor structures are used, then manufacturing is simpler, but sensitivity and reliability are insufficient

Engineering Contradiction:
Improvebiosensor reliabilityVSAvoiddevice structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The sensing portion is designed with a concave curvature instead of a flat surface. This curved structure increases the effective surface area for biomolecule binding and enhances the capacitive coupling between the sensing portion and the FET gate, thereby improving sensitivity and reliability without significantly complicating the manufacturing process

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The sensing portion extends in the vertical dimension (thickness direction) rather than only in the planar direction. By forming a concave structure that protrudes toward the FET, the sensing portion creates additional detection volume and strengthens the electric field interaction, improving detection capability while maintaining manufacturing feasibility

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If sensing portion is placed farther from FET, then manufacturing is easier, but detection sensitivity decreases

Engineering Contradiction:
Improvedetection sensitivityVSAvoidmanufacturing ease
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The concave curvature of the sensing portion allows it to be positioned closer to the FET while maintaining manufacturing feasibility. The curved geometry enables stronger capacitive coupling and closer proximity to the FET gate, thereby enhancing detection sensitivity without requiring overly complex manufacturing processes

Inventive Principle:
Principle #14Spheroidality (Curvature)

Solution Approach 2:

The sensing portion's geometric parameters (curvature radius, thickness, position) are optimized to achieve the closest possible placement to the FET while remaining manufacturable. By adjusting these parameters, the design achieves maximum sensitivity improvement without excessive manufacturing difficulty

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The configuration allows for precise and reliable detection of biological targets by varying drain current based on biomolecule binding, improving sensitivity and reliability of biosensor performance.

Implementation Method 1

a first sensing portion (210a) of a sensing film (210) capacitively coupled to the first FET (140a)

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS20260071993A1Semiconductor structure having biosensor and manufacturing method thereof
Publication Date: 2026.03.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20260071993A1 patent drawing
  • US20260071993A1 patent drawing
  • US20260071993A1 patent drawing

AI summary

A semiconductor structure includes a sensor and a dielectric layer. The sensor includes a first device and a second device, the first device includes a first field effect transistor (FET) and a first sensing portion of a sensing film coupled to the first FET, the second device includes a second FET and a second sensing portion of the sensing film coupled to the second FET, where the first device and the second device have different functions, and the second sensing portion is flatter than the first sensing portion. The dielectric layer is disposed on the sensing film and includes a sensing well located above the first device and the second device.