Concave Structure Film Deposition With Tuned Adhesion to Prevent Collapse

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Solution Overview

Problem

The existing methods for forming films on substrates with concave structures face challenges in reducing stress between patterns, leading to potential collapse and deformation during the filling process, particularly due to strong adhesive forces between film surfaces.

Innovation Solution

A technique involving the sequential use of two source gases to form films with varying adhesive forces, where a first film with a higher adhesive force is initially deposited, followed by a second film with a lower adhesive force, to reduce stress and prevent pattern collapse.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a film with strong adhesive force is used to fill the concave structure, then the film coverage is improved, but stress between patterns increases causing collapse and deformation

Engineering Contradiction:
Improvefilm coverageVSAvoidstress between patterns
Core Design Contradiction:
Manufacturing precisionVSStrength

Solution Approach 1:

The film filling process is segmented into multiple deposition steps with different source gases. The first source gas forms a film with strong adhesive force to ensure coverage, while the second source gas forms a film with weaker adhesive force to reduce stress. This segmentation allows each step to contribute different functional properties to the final film structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The adhesive force parameter of the film is changed between different deposition steps. By controlling the source gas composition and deposition conditions, the film's adhesive force is adjusted - first high for coverage, then low for stress reduction. This parameter change enables optimization of both film coverage and stress characteristics.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the adhesive force between film surfaces is increased to improve coverage, then film deposition is improved, but pattern collapse occurs due to excessive stress

Engineering Contradiction:
Improvefilm depositionVSAvoidpattern collapse
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The film deposition is segmented into multiple steps with different source gases. The first step uses a source gas that produces strong adhesive force for good coverage, while subsequent steps use source gases that produce weaker adhesive force to minimize stress and prevent pattern collapse.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the film have different adhesive force characteristics. The lower portions formed with the first source gas have strong adhesion for coverage, while upper portions formed with the second source gas have weaker adhesion to reduce stress accumulation and prevent collapse.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses pattern collapse and void formation by controlling the adhesive forces between film surfaces, ensuring uniform film coverage and maintaining the integrity of the concave structure.

Implementation Method 1

forming a first film exerting a predetermined adhesive force on an inner surface of a concave structure formed on a surface of a substrate by supplying a first source gas to the substrate

Methodology Applied
Scientific EffectVapor deposition: Physical Vapour Deposition

Implementation Method 2

forming a second film exerting an adhesive force smaller than that of the first film on the first film by supplying a second source gas to the substrate

Methodology Applied
Scientific EffectVapor deposition: Physical Vapour Deposition

Data Source

PatentUS20240222112A1Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Publication Date: 2024.07.04 KOKUSAI DENKI KK
  • US20240222112A1 patent drawing
  • US20240222112A1 patent drawing
  • US20240222112A1 patent drawing

AI summary

A technique is provided to perform: (a) forming a first film exerting a predetermined adhesive force on an inner surface of a concave structure formed on a surface of a substrate by supplying a first source gas to the substrate; and (b) forming a second film exerting an adhesive force smaller than that of the first film on the first film by supplying a second source gas to the substrate.