Concave Substrate Gap Fill Using Selective Upper-Portion Inhibition

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Solution Overview

Problem

Existing gap fill techniques fail to provide sufficient film-forming inhibition in the upper portions of concave features on substrates, leading to inadequate burial characteristics.

Innovation Solution

Form a base film with higher reactivity to film-forming inhibitors in the upper portion of concave features, followed by forming a film-forming inhibition layer, and then grow the film from the bottom of the concave feature where the inhibition layer is absent.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If film-forming inhibition gas is supplied to the upper portion of the concave portion, then the deposition rate in the upper portion is lowered, but the film-forming inhibition effect is insufficient and burial characteristics are inadequate

Engineering Contradiction:

Improveburial characteristicsVSAvoidfilm-forming inhibition effect

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A base film is formed in advance in the upper portion of the concave portion before the main film formation process. This base film serves as a reactive layer that enhances the subsequent film-forming inhibition effect when inhibition gas is supplied, ensuring reliable gap fill characteristics.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The structure consists of a composite of the base film and the main film. The base film has different properties (higher reactivity with film-forming inhibitor) compared to the main film, creating a composite structure that achieves both good step coverage and reliable film-forming inhibition for proper burial characteristics.

Inventive Principle:

Principle #40Composite materials

2Reliability

If a base film with high reactivity to film-forming inhibitor is formed in the upper portion of the concave portion, then the film-forming inhibition layer is effectively formed, but the process complexity increases

Engineering Contradiction:

Improvefilm-forming inhibition effectVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The base film formation step is combined with the existing film formation process flow. The base film is formed using the same CVD equipment and similar process conditions as the main film, merging multiple functions into a unified process sequence that reduces overall process complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The base film is formed by adjusting process parameters (such as temperature, pressure, or gas composition) during the film formation process. By changing parameters within the existing process window, the base film with enhanced reactivity is created without requiring additional equipment or fundamentally different process steps.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances burial characteristics by ensuring seamless and void-free gap fill, improving the quality of film formation in concave portions.

Implementation Method 1

forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion

Methodology Applied

Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 2

forming a film-forming inhibition layer on a portion of a surface of the base film by supplying the film-forming inhibitor

Methodology Applied

Scientific EffectAdsorption: Adsorption

Implementation Method 3

growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed by supplying a film-forming gas

Methodology Applied

Scientific EffectVapor deposition: Physical Vapour Deposition

Data Source

PatentUS20250218790A1Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

Publication Date: 2025.07.03 KOKUSAI DENKI KK

AI summary

There is provided a technique that includes: (a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate; (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate.