Concave Insulation Structure for Semiconductor Isolation
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, performance, and integration density while maintaining low power consumption and multifunctionality, particularly in the design of separation structures that effectively divide active patterns and support gate electrodes.
Innovation Solution
The semiconductor device incorporates a substrate with an active pattern divided by a separation structure that includes a first insulating pattern with a concave top surface and a second insulating pattern, where the second insulating pattern covers the first and has a greater width, along with spacers and conductive patterns, to enhance device isolation and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separation structure divides the active pattern into first and second regions, then carrier movement between regions is blocked, but the structural complexity increases
Solution Approach 1:
The separation structure is divided into multiple insulating patterns (first insulating pattern and second insulating pattern) with different functions. The first insulating pattern fills the recess region and provides primary isolation, while the second insulating pattern covers the top surface and provides additional isolation and planarization. This segmentation allows each component to be optimized for its specific function, improving overall carrier blocking effectiveness while managing structural complexity through functional division.
Solution Approach 2:
The separation structure extends in the vertical dimension with insulating patterns at different depths. The first insulating pattern is positioned in the recess region at a lower level, while the second insulating pattern is positioned at the top surface. This multi-level vertical arrangement enhances carrier blocking capability by creating isolation barriers at multiple depths, thereby improving reliability without proportionally increasing horizontal structural complexity.
2Stability of the object's composition
If the first insulating pattern has a concave top surface, then stress balance is maintained, but manufacturing precision requirements increase
Solution Approach 1:
The first insulating pattern is formed with a concave top surface specifically in the recess region, while the second insulating pattern provides a flat top surface at the upper level. This local quality differentiation allows the concave shape to be implemented only where stress balance is needed, without requiring the entire separation structure to meet high precision flatness requirements. The second insulating pattern compensates for the non-planar shape, maintaining overall manufacturing feasibility.
3Reliability
If the second insulating pattern has a greater width than the first insulating pattern, then device isolation is enhanced, but the area occupied by the separation structure increases
Solution Approach 1:
The second insulating pattern is positioned at the top surface level, while the first insulating pattern is positioned lower in the recess region. By utilizing the vertical dimension, the second insulating pattern can have a greater width and provide enhanced device isolation at the upper level without proportionally increasing the total volume of the separation structure. The multi-level arrangement allows for improved isolation performance while managing material consumption.
Data Source
AI summary
Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.