Concentric Semiconductor Device via Doping and Nesting
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in efficiently forming transistors and capacitors with precise control over conductor and insulator configurations, leading to suboptimal performance and reliability.
Innovation Solution
A method involving the formation of a semiconductor device with a column surrounded by an insulator and a conductor, where the conductor is concentrically positioned around the insulator, allowing for the creation of various semiconductor structures such as transistors and capacitors through precise doping and deposition techniques, enabling controlled current flow and storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication methods are used to form transistors and capacitors, then manufacturing simplicity is maintained, but manufacturing precision and device performance deteriorate due to suboptimal conductor and insulator configurations
Solution Approach 1:
The patent implements a nested structure where the insulator layer is positioned inside the conductor structure, creating a concentric configuration. This nesting approach allows precise control over the spatial relationships between conductor and insulator, improving manufacturing precision for transistor and capacitor formation while managing process complexity through systematic layering
Solution Approach 2:
The patent transitions from planar conductor-insulator arrangements to three-dimensional concentric configurations. By positioning the insulator within the conductor structure and controlling radial and axial dimensions, the method achieves superior geometric precision for semiconductor device formation, addressing the limitation of conventional two-dimensional fabrication approaches
2Reliability
If precise concentric configurations of conductors and insulators are implemented, then device performance and reliability improve, but manufacturing complexity increases
Solution Approach 1:
The patent performs preliminary doping of the substrate to create regions with specific electrical properties before forming the conductor and insulator structures. This preliminary action establishes the electrical foundation for reliable transistor and capacitor operation, ensuring proper charge carrier distribution and reducing subsequent process complexity
Solution Approach 2:
The patent systematically controls multiple parameters including dopant concentration, layer thicknesses, and radial positioning to achieve the desired concentric configurations. By optimizing these parameters throughout the fabrication sequence, the method improves device reliability while managing manufacturing complexity through parameter interrelationships
3Productivity
If dopant is implanted in the substrate adjacent to the insulator, then transistor and capacitor performance is optimized, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies dopant implantation selectively in specific regions of the substrate adjacent to the insulator structure. By localizing the doping action to precise spatial zones, the method optimizes transistor and capacitor performance without requiring uniform high precision across the entire substrate, thereby managing manufacturing precision requirements through spatially differentiated processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the fabrication of semiconductor devices by allowing for precise control over the formation of transistors and capacitors, improving performance and reliability by ensuring accurate concentric configurations of conductors and insulators, thereby optimizing current flow and storage capabilities.
Implementation Method 1
implanting a dopant in the substrate adjacent the insulator
Implementation Method 2
forming a conductor concentrically surrounding the insulator
Data Source
AI summary
A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and the insulator concentrically surrounding a column. The conductor, the insulator and the conductor are alternately configured to be a transistor, a resistor, or a capacitor. The column also functions as a via to send signals from a first layer to a second layer of the semiconductor device. The combination of via and at least one of a transistor, a capacitor, or a resistor in a semiconductor device decreases an area penalty as compared to a semiconductor device that has vias formed separately from at least one of a transistor, a capacitor, or resistor.