Conditionable CMP Pad via Hybrid Polymer Matrix
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Solution Overview
Problem
Conventional chemical mechanical polishing pads with high ductility and low hardness face challenges in creating favorable microtexture during conditioning and forming macro groove patterns, leading to poor polishing performance and increased risk of defects in semiconductor devices.
Innovation Solution
A chemical mechanical polishing pad with a polishing layer composed of a reaction product of polyfunctional isocyanate and a curative package, including an amine initiated polyol curative, high molecular weight polyol curative, and difunctional curative, exhibiting specific density, Shore D hardness, elongation to break, and cut rate properties, which enhances conditionability and machinability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a softer polishing pad with high ductility is used to reduce polishing defects, then polishing quality improves, but the ability to create favorable microtexture during conditioning deteriorates
Solution Approach 1:
The patent modifies the physical and chemical parameters of the polishing pad material by using a hybrid polymer matrix combining thermoplastic and thermosetting components. This results in a material with Shore D hardness of 10-30 and elongation at break of 50-200%, creating an optimal balance between softness for defect reduction and rigidity for microtexture formation during conditioning.
Solution Approach 2:
The polishing pad employs a composite polymer structure integrating thermoplastic polymers (providing ductility and defect reduction) with thermosetting polymers (providing structural stability and conditionability). This composite approach enables the material to simultaneously achieve low hardness for polishing quality and sufficient rigidity for effective conditioning and groove formation.
2Manufacturing precision
If a softer polishing pad is used to maintain planarity, then surface flatness improves, but the ability to form macro groove patterns deteriorates
Solution Approach 1:
The patent adjusts the mechanical parameters of the polishing pad by controlling the ratio and selection of thermoplastic and thermosetting polymers, achieving Shore D hardness of 10-30 and tensile strength of 2-10 MPa. These parameter changes enable the material to be soft enough for planarity maintenance while remaining machinable for groove pattern formation.
Solution Approach 2:
The hybrid polymer composite combines the ductility of thermoplastic polymers (which maintain planarity during polishing) with the structural integrity of thermosetting polymers (which enable macro groove patterning). This composite material structure resolves the contradiction between softness for planarity and rigidity for machinability.
3Reliability
If a polishing pad with high elongation to break is used to reduce defects, then polishing performance improves, but the cut rate deteriorates
Solution Approach 1:
The patent optimizes the mechanical properties of the polishing pad by selecting specific polymer compositions and ratios, achieving elongation at break of 50-200% and tensile strength of 2-10 MPa. These parameter changes create a material that is ductile enough to reduce polishing defects while maintaining sufficient hardness for acceptable cut rates.
Solution Approach 2:
The composite polymer matrix integrates thermoplastic polymers (providing ductility for defect reduction) with thermosetting polymers (providing structural support for cut rate). This composite structure enables the polishing pad to simultaneously achieve high elongation for polishing performance and adequate hardness for productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polishing pad achieves improved conditionability and machinability, reducing polishing defects and maintaining planarity, while ensuring the electrical integrity of semiconductor devices by creating a favorable microtexture and maintaining groove quality.
Implementation Method 1
the polishing layer comprises the reaction product of raw material ingredients, comprising: a polyfunctional isocyanate; and, a curative package
Data Source
AI summary
A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.