Conductance Adjustment Plate for Uniform Pressure in Substrate Processing
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving uniform gas supply and speedy gas exhaust during cyclic processing for semiconductor device manufacturing, leading to pressure inconsistencies in the processing space, which affects film formation uniformity.
Innovation Solution
A substrate processing apparatus with a conductance adjustment plate having a tapered or R-shaped portion is used to adjust the gas flow path conductance between the processing space and an exhaust buffer chamber, ensuring uniform pressure and improved film thickness by controlling the gas flow path dimensions and positioning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If exhaust conductance is increased to achieve speedy gas exhaust, then gas exhaust speed is improved, but pressure uniformity in the processing space deteriorates
Solution Approach 1:
The exhaust buffer chamber is positioned specifically at the outer peripheral side of the processing space, and the conductance adjustment plate is located at the gas flow path between the processing space and exhaust buffer chamber. This local arrangement allows exhaust conductance to be increased at the periphery without disrupting pressure uniformity in the central processing area, thereby resolving the contradiction between speedy gas exhaust and pressure uniformity.
2Manufacturing precision
If gas supply is increased to achieve uniform gas supply to the substrate, then film formation uniformity is improved, but pressure control difficulty increases
Solution Approach 1:
The exhaust buffer chamber acts as an intermediary between the processing space and the exhaust system. It provides a buffer volume that helps stabilize pressure fluctuations caused by increased gas supply, allowing uniform gas supply to the substrate without making pressure control more difficult. The conductance adjustment plate further mediates the gas flow between these chambers.
3Stress or pressure
If conductance adjustment plate with tapered or R-shaped portion is used to adjust exhaust conductance, then pressure uniformity is improved, but device complexity increases
Solution Approach 1:
The conductance adjustment plate features an R-shaped portion (curved surface) or tapered inclined portion on its inner peripheral side edge facing the gas flow path. This curved or tapered geometry smoothly guides gas flow from the processing space to the exhaust buffer chamber, reducing turbulence and improving pressure uniformity without significantly increasing structural complexity compared to a flat plate design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively adjusts exhaust conductance to maintain uniform pressure in the processing space, enhancing the uniformity of film thickness on the substrate during film formation.
Implementation Method 1
a conductance adjustment plate disposed on an outer peripheral side of the substrate, wherein the conductance adjustment plate is formed in a state that an inner peripheral side is supported by the substrate mounting table when the substrate is positioned at the substrate processing position, and in a state that an outer peripheral side is supported by a part other than the substrate mounting table when the substrate is positioned at the transport position, and has a tapered inclined portion or an R-shaped portion on an inner peripheral side edge facing a gas flow path from the processing space to the exhaust buffer chamber
Implementation Method 2
an elevation mechanism configured to elevate the substrate between a transport position and a substrate processing position in the processing space by elevating the substrate mounting table
Implementation Method 3
a gas supply system configured to supply a gas into the processing space
Implementation Method 4
a gas exhaust system configured to exhaust the gas flowed into the exhaust buffer chamber
Implementation Method 5
film formation is performed on a substrate by setting a source gas supplying step, a purging step, a reaction gas supplying step, and a purging step as one cycle
Data Source
AI summary
Provided is a substrate processing apparatus, including: a processing space configured to process a substrate: an exhaust buffer chamber which is provided so as to surround a lateral circumference of the processing space and into which a gas supplied into the processing space is flowed; and a conductance adjustment plate disposed to face a gas flow path between the processing space and the exhaust buffer chamber, wherein the conductance adjustment plate has R-shaped portion or a tapered inclined portion on an inner peripheral side edge facing the gas flow path from the processing space to the exhaust buffer chamber.