Conductive Feature Blocking Region for Etch Protection
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Solution Overview
Problem
The semiconductor industry faces challenges in forming conductive features, particularly in preventing chemical etching during the scaling down of devices, where new materials and geometries introduce complexities that previous generations did not have, such as the risk of chemical penetration through interfaces between dielectric and conductive features.
Innovation Solution
The formation of a blocking region with a modified composition on conductive features, which acts as a protective layer against etching chemicals, is achieved by altering the material composition at the surface of the conductive features, preventing chemical penetration and ensuring the integrity of underlying structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device geometry is scaled down to increase functional density, then production efficiency and cost are improved, but the risk of chemical penetration through interfaces between dielectric and conductive features increases
Solution Approach 1:
The conductive feature is segmented into multiple material regions: a first material forming the bulk of the conductive feature, and a second material forming a blocking region at the interface with the dielectric layer. This segmentation prevents chemical penetration while maintaining the conductive function of the overall structure.
Solution Approach 2:
The blocking region is formed with a different material composition specifically at the interface location where chemical penetration is a concern, while the rest of the conductive feature maintains its original conductive material. This local modification provides targeted protection without affecting the overall conductivity.
2Reliability
If a blocking region with modified composition is formed on conductive features, then chemical etching protection is improved, but the structural complexity increases
Solution Approach 1:
The blocking region is merged with the existing conductive feature structure, forming an integrated multi-material conductive feature. The second material is deposited conformally over the first material and then patterned, combining the protective blocking function with the conductive feature in a single integrated structure rather than adding separate protective layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents chemical etching of underlying conductive features, enhances adhesion between conductive features and dielectric layers, and improves the surface for subsequent deposition processes, leading to a more robust and reliable conductive structure.
Implementation Method 1
a blocking region disposed between the first conductive feature and the second conductive feature
Data Source
AI summary
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a structure includes a first dielectric layer over a substrate, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, a second conductive feature in the second dielectric layer, and a blocking region disposed between the first conductive feature and the second conductive feature. The second conductive feature is disposed between and abutting a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer. The blocking region extends laterally at least from the first sidewall of the second dielectric layer to the second sidewall of the second dielectric layer.