Conductive Bump Layout for Edge Stress in Semiconductor Packaging
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Solution Overview
Problem
New packaging technologies for semiconductor dies face manufacturing challenges due to stress and warpage issues, leading to cracks and delamination in conductive pillars, particularly at the edge and corner regions of the semiconductor chip.
Innovation Solution
The via area of peripheral conductive pillars is designed to be larger than that of central pillars, with wider protruding portions at the edge to distribute stress more evenly, reducing the risk of cracks and delamination by misalignment in bonding processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform via areas are used for all conductive pillars, then manufacturing process is simpler, but stress concentration occurs at edge and corner regions causing cracks and delamination
Solution Approach 1:
The patent applies local quality by varying the via areas of conductive pillars based on their positions. Central conductive pillars have a first via area, while edge and corner conductive pillars have second via areas that are larger than the first via area. This local differentiation addresses the stress concentration problem at edge and corner regions without complicating the overall manufacturing process, as all pillars still follow the same formation steps but with position-dependent dimensional variations.
2Reliability
If larger via areas are used at edge and corner regions, then stress distribution is improved and bonding strength increases, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent implements parameter changes by modifying the via area parameter according to the spatial position of conductive pillars. The design specifies that edge and corner pillars have larger via areas compared to central pillars, creating a gradient parameter distribution that optimizes stress distribution. This parameter variation is integrated into the standard manufacturing process, allowing precise control through conventional fabrication techniques while achieving improved bonding strength.
3Area of stationary object
If smaller package structures are used, then space utilization is improved, but stress and warpage issues are exacerbated
Solution Approach 1:
The patent addresses the stress resistance problem in compact packages by applying local quality differentiation to conductive pillar via areas. In smaller package structures, the non-uniform via area design becomes even more critical as it compensates for the reduced overall size. Edge and corner pillars with larger via areas provide enhanced stress distribution in the constrained space, maintaining reliability despite the reduced package footprint.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure. The semiconductor device structure also includes a second conductive structure over the semiconductor substrate. The second conductive structure is substantially as wide as the first conductive structure, and the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure. The first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure. The second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially level with each other.