Conductive Bump Layout With Offset Vias for Bonding Reliability
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in manufacturing smaller, more densely integrated semiconductor devices, particularly in ensuring reliable electrical connections and reducing stress concentrations in conductive vias and bumps.
Innovation Solution
A semiconductor device structure is developed with misaligned conductive vias and protruding conductive pillars to distribute bonding forces evenly, using materials like copper and solder, and incorporating under-bump metallization layers to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional aligned conductive vias and bumps are used, then manufacturing process is simpler, but stress concentrations occur at bonding interfaces reducing reliability
Solution Approach 1:
The patent applies asymmetry by intentionally misaligning the conductive vias with the conductive bumps, creating an asymmetric configuration where the via centers are offset from the bump centers by a controlled distance. This asymmetric arrangement distributes bonding stresses more evenly across the bonding interface, preventing stress concentration at directly aligned points and thereby improving bonding reliability.
Solution Approach 2:
The patent introduces a lateral offset dimension to the traditionally vertical alignment of conductive structures. By adding this lateral displacement parameter, the bonding interface experiences distributed rather than concentrated loads, effectively using dimensional adjustment to resolve the stress concentration problem while maintaining structural integrity.
2Volume of moving object
If smaller package structures are developed, then space is reduced, but manufacturing challenges increase for new packaging technologies
Solution Approach 1:
The patent changes the geometric parameters of the conductive structures by introducing controlled misalignment offsets between vias and bumps. This parameter modification allows the package to achieve smaller dimensions while the misaligned configuration provides manufacturing tolerance compensation, making the reduced-size package more manufacturable by reducing sensitivity to alignment variations.
3Reliability
If misaligned conductive structures are used, then stress concentrations are reduced improving reliability, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies partial action by introducing a controlled, partial misalignment rather than complete misalignment. The offset distance is optimized to be sufficient to distribute stresses effectively but not so large as to create excessive manufacturing challenges. This balanced approach achieves the stress distribution benefit while maintaining reasonable manufacturing precision requirements.
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.