Conductive Bump Reliability via Redistribution Layer Trenches

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Solution Overview

Problem

The existing flip chip packaging approach for semiconductor devices faces challenges with high connection resistance, limited current handling capability, complex design flexibility, electrical shorts due to conductive bump migration, and delamination under extreme conditions, particularly in high-density and high-current applications.

Innovation Solution

The solution involves forming shallow trenches in the passivation layer to expose electrical terminals, creating a conductive redistribution layer within these trenches, and forming conductive bumps on the redistribution layer to connect the terminals, which reduces connection resistance and prevents bump migration, while a polyimide layer or additional shallow trenches further enhance separation and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductive bumps are formed directly on passivation layer over dedicated pads, then electrical connection is established, but connection resistance is high and current handling capability is limited

Engineering Contradiction:
Improveconnection qualityVSAvoidcurrent handling capability
Core Design Contradiction:
ReliabilityVSPower

Solution Approach 1:

The patent divides the connection structure into multiple segments: dedicated pads, conductive redistribution layers, and conductive bumps. The conductive redistribution layer is formed in shallow trenches and acts as an intermediate conductor that reduces overall connection resistance while improving current handling capability between the pads and bumps.

Inventive Principle:
Principle #1Segmentation

2Productivity

If pitch between electrical pads is decreased to reduce device size, then device density increases, but conductive bumps may bridge during thermal reflow causing electrical shorts

Engineering Contradiction:
Improvedevice densityVSAvoidelectrical short prevention
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The conductive redistribution layer formed in shallow trenches acts as an intermediary structure between the dedicated pads and conductive bumps. This intermediate layer provides mechanical support and spatial separation that prevents bump bridging during thermal reflow, enabling higher device density without compromising reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If complex routing is used to connect electrical terminals to dedicated pads, then all terminals can be connected, but design flexibility is reduced and routing becomes hard to design

Engineering Contradiction:
Improveterminal connectionVSAvoidrouting complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent introduces a third dimension by forming conductive redistribution layers in shallow trenches within the passivation layer. This vertical dimension provides additional routing space and flexibility, allowing complex terminal connections without increasing planar routing complexity, thus improving ease of manufacture while maintaining design flexibility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Strength

If molding compound is formed to wrap and mold the package, then package protection is provided, but delamination from die surface occurs under high temperature and humidity conditions

Engineering Contradiction:
Improvepackage protectionVSAvoiddelamination resistance
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent performs preliminary action by forming shallow trenches and filling them with conductive redistribution layers before applying the molding compound. This preliminary structural preparation creates mechanical interlocking features and stress relief paths that prevent delamination between the molding compound and die surface under high temperature and humidity conditions.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS9768135B2Semiconductor device having conductive bump with improved reliability
Publication Date: 2017.09.19 MONOLITHIC POWER SYSTEMS INC
  • US9768135B2 patent drawing
  • US9768135B2 patent drawing
  • US9768135B2 patent drawing

AI summary

The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers.