Conductive-Filler Encapsulant for Thermally Stable Semiconductor Packaging
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving effective heat dissipation and device reliability due to limitations in material choices and stress management, particularly in package-on-package (PoP) structures, which affect integration density and device performance.
Innovation Solution
The implementation of an interconnect structure with an insulation layer and a molding compound having high thermal conductivity, where the insulation layer provides electrical isolation and reduces stress, allowing for the use of materials with higher thermal expansion coefficients, thereby enhancing heat dissipation and device quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional molding compounds with low thermal conductivity are used, then electrical insulation is maintained, but heat dissipation is insufficient
Solution Approach 1:
The molding compound is segmented into a matrix material (epoxy or polymer) and discrete conductive filler particles (metal flakes, powder, or whiskers). This segmentation allows the compound to simultaneously provide electrical insulation through the matrix while achieving high thermal conductivity through the conductive filler network, resolving the contradiction between heat dissipation and electrical insulation.
Solution Approach 2:
The patent employs composite materials by combining electrically insulating matrix materials (epoxy resin or polymer) with thermally conductive filler materials (metal flakes, powder, or whiskers). This composite structure enables the molding compound to exhibit both electrical insulation properties from the matrix and high thermal conductivity from the filler, directly resolving the technical contradiction between maintaining electrical isolation and improving heat dissipation.
2Temperature
If materials with high thermal expansion coefficients are used for the molding compound, then heat dissipation is improved, but stress between components increases
Solution Approach 1:
The patent changes the physical and chemical parameters of the molding compound by incorporating conductive fillers at optimized concentrations and aspect ratios. This parameter optimization allows the compound to achieve high thermal conductivity while the matrix material maintains its original coefficient of thermal expansion, thereby improving heat dissipation without increasing stress between components.
3Temperature
If conductive fillers are added to the molding compound, then thermal conductivity is enhanced, but electrical conductivity may increase unintentionally
Solution Approach 1:
The patent applies local quality by using conductive filler particles with high aspect ratios (flakes or whiskers) that create thermal conduction pathways locally without forming continuous electrical conductive networks throughout the material. The fillers are distributed to optimize thermal transport in specific directions while the matrix material maintains electrical insulation properties in the bulk, resolving the contradiction between enhancing thermal conductivity and maintaining electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves heat dissipation, device performance, and reduces defects by enabling the use of materials with higher thermal conductivities and flexibility in material choices for the molding compound, while maintaining electrical isolation and reducing stress between components.
Implementation Method 1
the molding compound being configured to conduct heat from the semiconductor die
Implementation Method 2
the insulation layer provides electrical isolation and reduces stress
Implementation Method 3
allowing for the use of materials with higher thermal expansion coefficients
Data Source
AI summary
Packaged semiconductor devices including high-thermal conductivity molding compounds and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution structure; a first die over and electrically coupled to the first redistribution structure; a first through via over and electrically coupled to the first redistribution structure; an insulation layer extending along the first redistribution structure, the first die, and the first through via; and an encapsulant over the insulation layer, the encapsulant surrounding portions of the first through via and the first die, the encapsulant including conductive fillers at a concentration ranging from 70% to about 95% by volume.