Transparent Conductive Film Laminate for Bendable Conductivity
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Solution Overview
Problem
Existing transparent conductive films, particularly those using indium-tin oxide (ITO) and metal oxides, are brittle and lack flexibility, making them unsuitable for flexible opto-electronic devices, and existing solutions fail to maintain conductivity upon bending.
Innovation Solution
A transparent conductive film comprising a laminate structure with layers of TiO2, ZrO2, or HfO2 alternating with sulfur-containing organic compounds, a metal layer, and another laminate structure with ZnO layers alternating with sulfur-containing organic compounds and a metallic dopant, which is deposited using atomic layer deposition to ensure flexibility and maintain conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ITO or metal oxide films are used as transparent conductive films, then high conductivity and transparency are achieved, but the films become brittle and cannot be bent without cracking
Solution Approach 1:
The film is divided into multiple thin layers (alternating organic and inorganic layers) rather than using a single thick inorganic layer. This segmentation allows the structure to flex without cracking while maintaining conductivity through the distributed metal particles and dopants across multiple layers.
Solution Approach 2:
The patent creates a composite structure combining organic compounds (flexible, bendable) with inorganic metal oxide layers (conductive, transparent) and metal particles. This composite approach allows the final film to exhibit both flexibility from the organic matrix and conductivity from the inorganic components, resolving the contradiction between brittleness and flexibility.
2Strength
If flexible organic-inorganic hybrid structures are used, then flexibility is improved, but conductivity may be reduced
Solution Approach 1:
Different regions of the film have different properties: the organic layers provide flexibility and mechanical strength, while the inorganic metal oxide layers with embedded metal particles provide conductivity and transparency. This local differentiation allows each layer to optimize its function without compromising the other.
Solution Approach 2:
The patent optimizes parameters such as layer thickness, metal particle size and distribution, and dopant concentration to achieve the desired balance between flexibility and conductivity. By carefully controlling these parameters, the film achieves both mechanical flexibility and electrical conductivity suitable for flexible optoelectronic devices.
3Strength
If multiple thin layers are deposited to create flexible structure, then flexibility is achieved, but manufacturing complexity increases
Solution Approach 1:
The film structure follows a periodic pattern of alternating organic and inorganic layers. This periodic structure, while complex in detail, follows a simple repeating unit that can be deposited using cyclic ALD processes, making the manufacturing relatively straightforward despite the multiple layers.
Solution Approach 2:
The patent uses atomic layer deposition (ALD), a chemical vapor deposition technique, to deposit the thin layers instead of mechanical assembly methods. ALD allows precise control of layer thickness and composition through chemical reactions, simplifying the manufacturing process compared to mechanical layer-by-layer assembly while achieving the required flexibility through the thin-multiple-layer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The film achieves high transparency, conductivity, and flexibility, with a sheet resistance of 100 Ω/sq or less and resistivity of 10^-3 Ω·cm or less, while maintaining conductivity even after bending 500 times around a radius of 0.5 cm, making it suitable for flexible opto-electronic devices.
Implementation Method 1
the organic-inorganic interface, in particular at the inorganic layer/organic compound interface
Implementation Method 2
A transparent conductive film according to claim 1, comprising (a) a first laminate comprising at least two layers containing TiO2, ZrO2 or HfO2 and a layer containing a sulfur-containing organic compound in between the two layers containing TiO2, ZrO2 or HfO2
Implementation Method 3
the film has a sheet resistance of 1000 Ω/sq or less, more preferably 500 Ω/sq or less, even more preferably 200 Ω/sq or less, in particular 100 Ω/sq or less
Data Source
AI summary
The present invention is in the field of transparent conductive films. In particular, the present invention relates to a transparent conductive film comprising: a) a first laminate comprising: - at least two layers containing TiO2, ZrO2 or HfO2 and - a layer containing an organic compound in between the two layers containing TiO2, ZrO2 or HfO2, b) a metal layer, and c) a second laminate comprising: - at least two layers containing ZnO and - a layer containing an organic compound between the two layers containing ZnO, - a metallic dopant other than zinc.