Conductive Structure Manufacturing via Infrared Crystallization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing conductive structure bodies, particularly for touch screen panels, are complex and inefficient due to the need for separate crystallization of transparent conductive layers and metal layers, which complicates the process and results in higher surface resistance, limiting the performance of large-area touch screens.
Innovation Solution
A method involving the formation of a metal layer on an amorphous transparent conductive layer followed by heat treatment using infrared light, with the option of forming a metal oxide, nitride, or oxy-nitride layer on the metal layer to enhance crystallization, allowing for a continuous roll-to-roll process and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a metal layer is formed on a crystallized ITO layer using conventional methods, then the manufacturing process requires separate crystallization steps, but this increases process complexity and manufacturing time
Solution Approach 1:
The patent inverts the conventional sequence by forming the metal layer on amorphous ITO first, then crystallizing the ITO afterward. This reversal eliminates the need for separate crystallization steps before metal deposition, simplifying the overall manufacturing process while maintaining product quality
Solution Approach 2:
The patent combines the metal layer formation and ITO crystallization into a single integrated process sequence. By forming metal on amorphous ITO and then crystallizing the ITO in one continuous flow, the process merges previously separate steps, reducing manufacturing complexity and time
2Reliability
If separate crystallization of ITO layer is performed before metal layer formation, then crystallization can be achieved, but this results in higher surface resistance and limits performance
Solution Approach 1:
By reversing the sequence to crystallize ITO after metal layer formation rather than before, the patent achieves better crystallization quality and lower surface resistance, directly improving the conductive layer's performance and reliability
Solution Approach 2:
The patent performs preliminary metal layer formation on amorphous ITO, which then serves as a template or influence during the subsequent crystallization process, leading to improved crystallization quality and reduced surface resistance
3Productivity
If conventional manufacturing methods are used for large-area touch screens, then production can proceed, but this increases manufacturing time and reduces productivity
Solution Approach 1:
The patent enables continuous manufacturing by eliminating idle crystallization steps between ITO formation and metal deposition. The process flows continuously from amorphous ITO formation to metal layer deposition to ITO crystallization, maximizing productivity for large-area touch screens
Solution Approach 2:
By inverting the process sequence to crystallize ITO after metal layer formation, the patent eliminates time-consuming separate crystallization steps, significantly reducing manufacturing cycle time and improving overall productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach efficiently crystallizes transparent conductive layers like ITO, reduces residual compressive stress, and simplifies the manufacturing process, enabling the production of conductive structure bodies with improved conductivity and reduced surface resistance, suitable for high-resolution touch screens with narrow bezels.
Implementation Method 1
the step of heat treatment is irradiating infrared light on the metal oxide layer, the metal nitride layer or the metal oxy-nitride layer using an infrared (IR) lamp
Implementation Method 2
heat treating the conductive structure body precursor to crystallize the amorphous transparent conductive layer
Implementation Method 3
the step of forming a metal oxide layer, a metal nitride layer or a metal oxy-nitride layer on the metal layer uses sputtering method
Data Source
Figure 1~3
Figure 4~5
Figure 6
AI summary
The present application provides a conductive structure body precursor, a conductive structure body and a method for manufacturing the same.