Conductive Layer Reduces Contact Resistance in Stacked Semiconductor Storage
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Solution Overview
Problem
Current semiconductor storage devices face challenges in reducing power consumption due to high contact resistance between channel films, which affects the efficiency of cell current flow and storage.
Innovation Solution
The implementation of a metal layer or silicide layer between the channel films of the first and second columnar bodies in the stacked body structure, reducing contact resistance and enhancing cell current flow by optimizing the layer's position and dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a stacked body structure with multiple columnar bodies is used to increase storage capacity, then the storage density is improved, but the contact resistance between channel films increases causing power consumption to rise
Solution Approach 1:
A conductive layer is introduced as an intermediary between the channel film of the first columnar body and the core of the second columnar body. This conductive layer serves as a mediator to facilitate current flow and reduce contact resistance at the interface between different structural components, thereby lowering power consumption while maintaining the stacked body configuration for high storage capacity.
2Area of stationary object
If channel films are positioned closer together to reduce device area, then the area occupancy is improved, but the contact resistance between channel films increases disrupting current flow
Solution Approach 1:
The conductive layer acts as a reliable intermediary that ensures stable electrical contact between channel films positioned in close proximity. By introducing this conductive mediator, the design achieves compact area occupancy while maintaining reliable current flow through the reduced spacing between columnar bodies.
3Productivity
If the stacked body structure is densified to increase storage density, then the storage efficiency is improved, but the cell current flow becomes unstable due to increased contact resistance
Solution Approach 1:
The conductive layer serves as a stabilizing intermediary in the densified stacked body structure. It ensures stable cell current flow between the first columnar body's channel film and the second columnar body's core, enabling high storage efficiency while preventing current flow disruptions that would otherwise result from increased contact resistance in the compact configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces power consumption and stabilizes cell current flow, preventing interruptions and improving charge storage efficiency in the memory cell array.
Implementation Method 1
The conductive layer is in contact with the second channel film of the second columnar body and the first channel film of the first columnar body. This configuration reduces power consumption and stabilizes cell current flow, preventing interruptions and improving charge storage efficiency.
Data Source
AI summary
According to one embodiment, a semiconductor storage device includes a stacked body, a first columnar body, and a second columnar body. In the stacked body, a plurality of conductive layers and a plurality of insulating layers are alternately stacked along a first direction. The first columnar body extends through the stacked body. The second columnar body extends through the stacked body, and is aligned with the first columnar body along the first direction. The second columnar body includes a second channel film. The first columnar body includes a first channel film, a core surrounded by the first channel film, and a conductive layer. The conductive layer is in contact with the second channel film of the second columnar body and the first channel film of the first columnar body.