Conductive Line Patterning With Sacrificial Etching for Uniform Contacts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability and complexity due to increasing demands for miniaturization, multi-functionalization, and high-speed performance, which are not adequately addressed by current manufacturing methods.
Innovation Solution
The method involves forming insulating structures, hard mask layers, and sacrificial patterns, followed by precise etching processes using photoresist patterns as etch masks to create conductive lines and contacts, enhancing the uniformity and reliability of semiconductor device manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing methods are used, then production simplicity is maintained, but manufacturing precision and reliability deteriorate due to inability to address miniaturization and multi-functionalization demands
Solution Approach 1:
The patent divides the conductive line formation process into multiple etching stages (first etching process for initial openings, second etching process for refined openings) with separate photoresist patterns and sacrificial patterns for each stage. This segmentation allows precise control over complex multi-layer conductive structures, enabling high manufacturing precision while systematically managing device complexity through structured process decomposition
Solution Approach 2:
The patent forms sacrificial patterns in advance before the final etching process. These sacrificial patterns serve as temporary structures that define the precise geometry of conductive lines during manufacturing. By performing this preliminary action, the method ensures accurate conductive line formation in subsequent etching steps while maintaining control over overall device complexity
Solution Approach 3:
The patent introduces photoresist patterns as intermediary elements that mediate between the design specifications and the actual conductive line formation. Multiple photoresist patterns with different opening configurations act as intermediaries to transfer precise geometric information through the etching process, enabling high manufacturing precision for complex structures without directly increasing process difficulty
2Productivity
If miniaturization is pursued to meet performance demands, then device functionality is improved, but manufacturing precision deteriorates due to increased complexity
Solution Approach 1:
The patent segments the conductive line formation into multiple etching processes with dedicated photoresist patterns for each layer. This segmentation enables independent optimization of each etching step, maintaining high manufacturing precision even as devices are miniaturized to meet performance demands. Each segmented process can be precisely controlled without being affected by the complexity of other layers
Solution Approach 2:
The patent performs preliminary formation of sacrificial patterns that precisely define the geometry of miniaturized conductive lines before the actual etching. These pre-formed sacrificial structures serve as accurate templates that guide the etching process, ensuring manufacturing precision is maintained even when feature sizes are reduced to improve device productivity and performance
3Manufacturing precision
If multiple etching processes are used to improve precision, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent segments the etching process into multiple independent steps, each with its own photoresist pattern and sacrificial pattern. This segmentation improves manufacturing precision by allowing each etching step to be independently optimized and controlled. The systematic organization of segmented processes manages overall complexity through clear process architecture rather than creating unmanageable complexity
Solution Approach 2:
The patent uses sacrificial patterns as intermediary structures that simplify each etching step. These temporary sacrificial structures act as mediators that define the geometry of conductive lines, making each individual etching process simpler and more precise. The intermediaries enable high manufacturing precision through multiple etching processes while managing complexity by providing clear, temporary guides for each step
Data Source
AI summary
A method for manufacturing a semiconductor device including forming an insulating structure, forming a hard mask layer on the insulating structure, performing a first etching process to form a first opening at the hard mask layer, forming a first sacrificial pattern in the first opening, forming, on the hard mask layer, a first photoresist pattern including a second opening and a third opening, the second opening exposing a top surface of the first sacrificial pattern, the third opening exposing a top surface of the hard mask layer, and performing a second etching process using the first photoresist pattern as an etch mask may be provided.