Horizontal Conductive Line Work Function Tuning for 3D Memory
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration and high operating speed, particularly in three-dimensional memory devices, due to issues with leakage current and cell threshold voltage control.
Innovation Solution
The semiconductor device incorporates a horizontal conductive line structure with a high work function electrode, such as molybdenum-based materials, and a low work function electrode, like doped polysilicon, to adjust the cell threshold voltage and reduce leakage current, enabling improved integration and operating efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials are used for horizontal conductive lines, then manufacturing is simpler, but cell threshold voltage control and leakage current reduction are insufficient
Solution Approach 1:
The horizontal conductive line employs a composite structure with a first horizontal conductive line and a second horizontal conductive line having different work functions. This composite material approach enables effective leakage current control and cell threshold voltage adjustment while managing the complexity through structured material combination.
Solution Approach 2:
Different regions of the horizontal conductive line structure are assigned different material properties with specific work functions. The first horizontal conductive line has one work function while the second has a different work function, creating local quality variations that optimize both threshold voltage control and leakage current reduction in specific device regions.
2Productivity
If conventional electrode materials are used, then manufacturing process is simpler, but operating speed and integration density are limited
Solution Approach 1:
The electrode structure utilizes composite materials with different work functions arranged in a multi-layer configuration. This enables higher integration density and improved operating speed by optimizing electrical characteristics, while the structured composite approach manages manufacturing complexity through systematic material layering.
Solution Approach 2:
The electrode structure transitions from conventional planar configurations to a multi-dimensional stacked arrangement with first and second horizontal conductive lines at different levels. This dimensional change enables improved integration density and operating performance while managing complexity through vertical stacking rather than lateral expansion.
3Manufacturing precision
If single-material conductive lines are used, then manufacturing is easier, but electric field control and threshold voltage adjustment are insufficient
Solution Approach 1:
The conductive line structure employs composite materials with different work functions to achieve precise threshold voltage control and electric field management. While this multi-material approach increases manufacturing complexity, it enables superior manufacturing precision in threshold voltage adjustment that cannot be achieved with single-material lines.
Solution Approach 2:
The invention changes the work function parameter of the conductive line materials to optimize device performance. By selecting materials with different work functions for the first and second horizontal conductive lines, precise control over threshold voltage and electric field distribution is achieved, enabling fine-tuned manufacturing precision despite increased material selection complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively lowers the electric field, enhances memory cell integration, and improves operating speed by adjusting the cell threshold voltage, thereby addressing the limitations of existing technologies.
Implementation Method 1
a horizontal conductive line including a high work function electrode including a material having a higher work function than titanium nitride; and a low work function electrode including a semiconductor material
Data Source
AI summary
A semiconductor device includes: a vertical conductive line oriented vertically in a first direction; a horizontal layer oriented horizontally in a second direction from the vertical conductive line; and a horizontal conductive line oriented horizontally in a third direction intersecting with the horizontal layer, wherein the horizontal conductive line includes: a high work function electrode including a material having a higher work function than titanium nitride; and a low work function electrode including a semiconductor material.