Conductive Mask for ELOG Semiconductor Structures
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Solution Overview
Problem
Conventional epitaxial lateral overgrowth (ELOG) structures using dielectric masks suffer from defects and inefficiencies in heat and current flow due to lattice mismatch, leading to overheating and non-uniform current distribution, which limits device performance and requires additional heat dissipation solutions.
Innovation Solution
The use of thermally and electrically conductive masks formed from carbon nanostructures or graphene allows for improved heat and current conduction, reducing defects and enhancing the growth of ELOG materials like GaN, enabling more efficient thermal and electrical pathways.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a dielectric mask is used for ELOG material growth, then the mask can withstand high growth temperatures, but current and heat flow are constricted causing current crowding and thermal crowding
Solution Approach 1:
The patent changes the electrical and thermal conductivity parameters of the mask by transitioning from a dielectric mask to a conductive mask made of metal or doped semiconductor material. This parameter change allows the mask to maintain temperature resistance while simultaneously improving current and heat flow distribution, eliminating current crowding and thermal crowding effects.
Solution Approach 2:
The patent employs composite material structures where the conductive mask is integrated with the substrate and ELOG material layers. The mask can be formed as a metal layer or doped semiconductor region that provides both mechanical support and enhanced electrical/thermal conduction pathways, creating a composite structure that resolves the contradiction between temperature resistance and current flow uniformity.
2Manufacturing precision
If a dielectric mask is used for ELOG material growth, then the mask provides a suitable surface for lateral growth, but defects are created in the transition from vertical extension to lateral overgrowth
Solution Approach 1:
The patent changes the material composition and surface properties of the mask from dielectric to conductive material. This parameter change modifies the interface characteristics between the mask and ELOG material, reducing defect formation during the transition from vertical to lateral growth while maintaining suitable surface properties for epitaxial growth.
3Reliability
If devices are spaced laterally from defects by using wing portions of ELOG material, then device functionality is maintained, but heat dissipation efficiency is reduced
Solution Approach 1:
The patent changes the thermal conductivity parameter of the mask structure by using conductive materials instead of dielectric materials. This enables more efficient heat dissipation pathways through the mask and substrate, allowing devices to be positioned closer to the growth region without compromising thermal management, thus improving heat dissipation efficiency while maintaining device functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive masks facilitate better heat and current distribution, reducing defects and overheating issues, thereby improving the quality and performance of ELOG structures and devices built upon them.
Implementation Method 1
The thermal and electrical conductive properties of the masks upon which the ELOG materials are formed generally enable heat and current to be conducted more readily between devices positioned on the ELOG materials and a substrate
Implementation Method 2
The thermal and electrical conductive properties of the masks upon which the ELOG materials are formed generally enable heat and current to be conducted more readily between devices positioned on the ELOG materials and a substrate
Implementation Method 3
The use of thermally and electrically conductive masks formed from carbon nanostructures or graphene allows for improved heat and current conduction
Implementation Method 4
The use of thermally and electrically conductive masks formed from carbon nanostructures or graphene allows for improved heat and current conduction
Implementation Method 5
epitaxial lateral overgrowth (ELOG) is used to form the GaN material, or other material, on another material, typically, through a channel or aperture in a dielectric material on a crystalline substrate
Data Source
AI summary
A semiconductor structure includes a substrate, a thermally and electrically conductive mask positioned upon the substrate, and an epitaxial lateral over growth (ELOG) material positioned upon the thermally and electrically conductive mask.