Conductive Member Openings for Void-Free Semiconductor Resin Sealing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face challenges in efficiently carrying large currents due to incomplete filling of sealing resin, which can lead to void generation and reduced reliability, especially in configurations with narrow gaps between conductive portions.
Innovation Solution
The semiconductor device incorporates a conductive member with a flat section and bent sections, featuring openings that allow resin flow and bubble migration, ensuring complete resin filling and preventing voids, while the conductive substrate's design facilitates a large current-carrying capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the gap between conductive portions is reduced to increase current-carrying capacity, then the current-carrying capacity is improved, but the sealing resin filling becomes incomplete and voids are generated
Solution Approach 1:
The conductive member is divided into multiple sections (first conductive section, second conductive section, third conductive section) with through-holes positioned between them. This segmentation allows the sealing resin to flow through the through-holes and reach narrow gaps that would otherwise be inaccessible, ensuring complete filling while maintaining high current-carrying capacity through the distributed conductive structure.
Solution Approach 2:
Through-holes are introduced as intermediary channels that facilitate the flow of sealing resin into narrow gaps between conductive portions. These holes act as mediators that bridge the gap between the resin injection point and the difficult-to-reach areas, enabling complete filling without requiring direct access to all gap regions.
2Power
If the conductive substrate structure is optimized for large current flow, then the current-carrying capacity is improved, but the sealing resin flow is blocked and voids are generated
Solution Approach 1:
The conductive member has different local structures: solid conductive sections for current carrying and through-holes for resin flow. Each local region is optimized for its specific function - the conductive sections maintain electrical connectivity while the through-holes provide resin access paths, resolving the conflict between current-carrying optimization and manufacturing precision.
Solution Approach 2:
The conductive member incorporates through-holes that create a porous-like structure, allowing the sealing resin to penetrate through the conductive member and reach narrow gaps. This porous approach enables the structure to simultaneously maintain electrical conductivity and facilitate complete resin filling during manufacturing.
3Power
If the gap between conductive portions is narrowed to increase power capacity, then the power capacity is improved, but bubbles are trapped and voids are generated
Solution Approach 1:
The conductive member is segmented into multiple sections with through-holes positioned between them. This segmentation creates multiple resin flow paths that allow bubbles to escape during filling, preventing void formation while maintaining the narrow gaps necessary for high power capacity through efficient current distribution.
Solution Approach 2:
The through-holes, which might seem to compromise the conductive structure, actually serve as beneficial escape routes for bubbles during resin filling. By converting what could be structural weaknesses into bubble escape channels, the design eliminates void formation while preserving the narrow-gap configuration needed for high power capacity.
Data Source
AI summary
A semiconductor device includes a conductive substrate including an obverse surface facing a first side in thickness direction and a reverse surface opposite from the obverse surface, a first switching semiconductor element bonded to the obverse surface, a first conductive member for passing main circuit current switched by the semiconductor element, and a sealing resin covering the semiconductor element, the conductive member and a part of the substrate. The substrate includes first and second conductive portions mutually spaced in first direction orthogonal to thickness direction. The semiconductor element is electrically bonded to the first conductive portion. The conductive member includes a first part overlapping with the first and the second conductive portions as viewed in thickness direction and being spaced from the obverse surface toward the first side in thickness direction. The first part includes a first opening.