Conductive Nitride Contact Structure to Block Metal Diffusion
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving smaller dimensions and improved power efficiency, particularly in the formation of semiconductor structures that require precise control over materials and processes to enhance performance.
Innovation Solution
The method involves forming a semiconductor structure with a conductive nitride feature by introducing nitrogen into an alloy structure, which is then transformed into an alloy nitride structure to improve conductivity and prevent metal diffusion, using a series of steps including annealing, nitridation, and forming conductive lines with a barrier layer to enhance the semiconductor device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal structures are used in semiconductor devices, then manufacturing is simpler, but metal diffusion occurs and conductivity is insufficient
Solution Approach 1:
The patent employs composite material structures including alloy structures (e.g., CoRu, CoIr) and alloy nitride structures (e.g., CoRuN, CoIrN) that combine multiple elements to achieve both low resistance and diffusion barrier properties. This composite approach allows the material to simultaneously provide electrical conductivity and prevent metal diffusion into surrounding dielectric layers, resolving the contradiction between reliability and structural complexity.
Solution Approach 2:
The patent utilizes parameter changes by transforming the alloy structure into an alloy nitride structure through nitridation processes. This chemical transformation changes the material properties, enhancing both conductivity and diffusion barrier characteristics. The phase transition from metallic to nitride phase modifies electrical and diffusion properties, achieving improved reliability without significantly increasing structural complexity.
2Productivity
If smaller dimensions are pursued in semiconductor devices, then device density increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies preliminary action by forming the alloy structure and performing nitridation before final device assembly and operation. The alloy structure is prepared in advance with controlled composition and crystal structure, and the nitridation process is performed beforehand to establish the diffusion barrier properties. This preliminary preparation ensures that when smaller dimensions are implemented, the materials are already optimized for the required precision and performance.
Solution Approach 2:
The patent implements local quality by creating spatially varying material properties within the contact structure. The alloy nitride structure exhibits different properties at different locations: high conductivity in the bulk and enhanced diffusion barrier properties at the interfaces with dielectric layers. This localized optimization of material properties enables smaller dimensions while maintaining manufacturing precision through controlled material behavior in critical regions.
3Reliability
If alloy nitride structures are formed through nitridation, then conductivity and diffusion barrier properties improve, but process complexity increases
Solution Approach 1:
The alloy nitride structure serves multiple functions simultaneously: it provides electrical conductivity, acts as a diffusion barrier, and serves as an adhesive layer between metal contacts and dielectric materials. This multi-functionality reduces the need for separate layers for each function, thereby simplifying the overall process complexity while achieving improved reliability through the nitridation treatment.
Solution Approach 2:
The patent merges multiple functions into a single alloy nitride structure layer. Instead of using separate metal layer, barrier layer, and adhesive layer, the alloy nitride structure combines these functions in one integrated layer. The nitridation process transforms the alloy structure to simultaneously provide conductivity, diffusion barrier properties, and interfacial adhesion, reducing process steps and overall device complexity while enhancing reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive nitride feature enhances the semiconductor device's conductivity and prevents metal diffusion, leading to improved performance and reliability in smaller dimensions.
Implementation Method 1
introducing nitrogen into the contact feature, so that top portion of the contact feature is formed into a conductive nitride feature
Implementation Method 2
a series of steps including annealing, nitridation
Data Source
AI summary
A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature. The semiconductor structure includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature disposed in the second dielectric feature and being connected to at least one of the source/drain regions and the gate structure. The conductive nitride feature includes metal nitride or alloy nitride, is disposed in the second dielectric feature, and is connected to the contact feature. The third dielectric feature is disposed over the second dielectric feature. The conductive feature is disposed in the third dielectric feature and is connected to the conductive nitride feature opposite to the contact feature.