Conductive Pattern Formation via Selective Seeding Layer Irradiation
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Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in forming conductive patterns with high aspect ratios, requiring complex photolithography and etching steps, which hinder efficiency and scalability as device sizes decrease.
Innovation Solution
A method involving a seeding layer with irradiated and unirradiated regions formed by energy ray treatment, followed by conversion and selective growth processes, allowing conductive patterns to be formed without the need for photolithography and etching, using processes like oxidation or nitridation treatments and etch back processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If photolithography and etching processes are used to form conductive patterns, then the conductive patterns can be manufactured with conventional methods, but the manufacturing steps become complicated and efficiency decreases
Solution Approach 1:
The patent extracts and eliminates the photolithography and etching steps from the conventional manufacturing process. By using a self-aligned approach where the conductive layer is directly patterned through selective deposition and etching based on underlying structure differences, the complex photoresist coating, exposure, and development steps are removed, simplifying the manufacturing process while maintaining precision
Solution Approach 2:
The patent performs preliminary preparation of the substrate with specific layer structures (such as mandrel layers, spacer layers, or doping patterns) before depositing the conductive material. This preliminary structuring enables direct selective etching or deposition without requiring subsequent photolithography steps, thereby improving manufacturing efficiency
2Length of moving object
If the size of semiconductor devices is reduced, then the distance between devices is shortened, but the aspect ratio of conductive patterns increases making manufacturing more difficult
Solution Approach 1:
The patent applies local quality by creating regions with different etch selectivities or deposition properties in different areas of the substrate. By varying the composition, thickness, or structure of underlying layers locally, the conductive material can be selectively formed in desired patterns with controlled aspect ratios, even as overall device dimensions are reduced
Solution Approach 2:
The patent transitions from two-dimensional planar patterning to three-dimensional structured patterning. By utilizing vertical layer structures, spacer formations, and conformal deposition techniques, the patent achieves precise lateral patterning control through vertical dimension manipulation, effectively managing aspect ratio challenges in scaled devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing steps, enabling the formation of conductive patterns with suitable sizes and configurations efficiently, thereby enhancing semiconductor device production efficiency and reducing costs.
Implementation Method 1
An irradiation treatment is performed to a portion of a surface of the seeding layer by using an energy ray
Implementation Method 2
the energy ray includes an E beam or a laser beam
Implementation Method 3
the conversion treatment includes an oxidation treatment or a nitridation treatment
Implementation Method 4
the conversion treatment includes an oxidation treatment or a nitridation treatment
Implementation Method 5
A selective growth process is performed to form a conductive pattern on each of the unirradiated regions of the seeding layer
Implementation Method 6
a method of removing the irradiated regions of the seeding layer includes an etch back process
Data Source
AI summary
A method of forming conductive pattern is provided. A seeding layer is formed on an underlayer. By using an energy ray, an irradiation treatment is performed on a portion of a surface of the seeding layer. The seeding layer thus includes a plurality of irradiated regions and a plurality of unirradiated regions. A conversion treatment is performed on the irradiated regions of the seeding layer. A selective growth process is performed, so as to form a conductive pattern on each unirradiated region of the seeding layer. The irradiated regions of the seeding layer are removed, so that the conductive patterns are insulated from each other.