Conductive Pattern for Vertical Channel Electrical Connection
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Solution Overview
Problem
In vertical type memory devices, as the aspect ratio of the vertical channel pattern increases, the electrical connection between the vertical channel pattern and the substrate becomes more challenging, leading to difficulties in achieving reliable electrical connections.
Innovation Solution
A semiconductor device is designed with a substrate, alternately stacked insulation patterns and gates, a channel pattern extending perpendicular to the substrate, a semiconductor pattern, and a conductive pattern that electrically connects the channel pattern to the semiconductor pattern, using polysilicon and forming an insulation structure between them to enhance electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the aspect ratio of the vertical channel pattern is increased to improve storage capacity, then the electrical connection between the vertical channel pattern and the substrate becomes more difficult, leading to open failures
Solution Approach 1:
The conductive pattern is divided into multiple segments stacked vertically, with each segment providing a separate electrical connection path. This segmentation allows the total conductive path to span the increased aspect ratio while maintaining reliable electrical connection through multiple contact points along the channel pattern sidewall
Solution Approach 2:
The electrical connection transitions from a single-point contact at the channel bottom to a distributed contact along the channel sidewall. The conductive pattern wraps around the channel pattern in the lateral dimension and extends vertically, creating a three-dimensional connection structure that maintains electrical reliability despite increased vertical height
2Adaptability or versatility
If the number of stacked gates is increased to improve device functionality, then the complexity of ensuring robust electrical connections increases
Solution Approach 1:
The conductive pattern structure serves multiple functions simultaneously: it provides electrical connection, acts as a barrier to diffusion, and forms a structural framework. This multi-functional design maintains connection reliability across devices with varying numbers of stacked gates without requiring separate connection structures for each configuration
Solution Approach 2:
The conductive pattern acts as an intermediary structure between the channel pattern and underlying electrodes. This intermediary provides a stable connection interface that accommodates variations in the number of stacked gates while maintaining consistent electrical connection quality
Data Source
AI summary
A semiconductor device includes a plurality of insulation patterns and a plurality of gates alternately and repeatedly stacked on a substrate, a channel pattern extending through the gates in a first direction substantially perpendicular to a top surface of the substrate, a semiconductor pattern between the channel pattern and the substrate, and a conductive pattern between the channel pattern and the semiconductor pattern. The conductive pattern electrically connects the channel pattern to the semiconductor pattern. The conductive pattern contacts a bottom edge of the channel pattern and an upper surface of the semiconductor pattern.