Conductive Plate Air Pocket Structure for Semiconductor Resin Voids
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Solution Overview
Problem
The formation of voids (bubbles) during the resin injection process in semiconductor modules can lead to insulation defects and reduced reliability due to peeling of the sealing resin, especially in modules with multiple power semiconductor chips.
Innovation Solution
A structure with an air pocket or groove is formed on the conductive plate where the sealing resin flows merge, trapping voids and preventing resin peeling, thereby ensuring reliable insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sealing resin is injected to seal the semiconductor element and conductive plate, then the electrical insulation and protection are improved, but voids (bubbles) occur during the injection process causing insulation defects and resin peeling
Solution Approach 1:
The invention converts the harmful effect of air pockets by deliberately creating them in controlled locations. The air pocket structure is intentionally formed on the conductive plate surface at positions where resin flows merge, transforming the harmful void formation into a beneficial trap mechanism that prevents voids from reaching critical areas and causes resin peeling.
Solution Approach 2:
The air pocket structure acts as an intermediary element between the sealing resin and the conductive plate. It serves as a mediator that intercepts and traps voids formed during resin injection, preventing them from causing direct damage to the electrical insulation and preventing resin peeling by absorbing the harmful effect in a controlled manner.
2Adaptability or versatility
If multiple power semiconductor chips are mounted to increase current capacity, then the functionality is improved, but the occurrence of voids increases due to complex resin flow patterns
Solution Approach 1:
The invention applies local quality by creating air pockets specifically at strategic locations where resin flows from multiple injection points converge. Rather than uniformly treating the entire surface, the air pocket structures are localized at critical merge zones, providing targeted void trapping exactly where the complex flow patterns from multiple chips create the highest void risk.
3Productivity
If low-viscosity sealing resin is used with higher injection rates to improve manufacturing efficiency, then the productivity is improved, but void formation increases
Solution Approach 1:
The air pocket structures are created in advance on the conductive plate surface before the resin injection process begins. This preliminary preparation ensures that when high-speed injection of low-viscosity resin occurs, the voids are immediately trapped by the pre-positioned air pockets, allowing high productivity without sacrificing quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air pocket effectively traps voids, preventing resin peeling and maintaining the electrical reliability of the semiconductor module, even when using low-viscosity sealing resins and higher injection rates, thus enhancing manufacturing efficiency.
Implementation Method 1
a structure with an air pocket or groove is formed on the conductive plate where the sealing resin flows merge, trapping voids and preventing resin peeling
Data Source
AI summary
A semiconductor device includes a conductive plate having a front surface on which a semiconductor element is mounted and a sealing resin sealing therein at least the front surface of the conductive plate. The conductive plate includes a structure that traps bubbles in a region where flows of the injected sealing resin merge. The conductive plate has a rectangular shape. The sealing resin is injected from a single inlet on a first longitudinal side of the conductive plate. The region where the flows of the sealing resin merge is a region of a corner of a second longitudinal side that across the semiconductor element, opposes the first longitudinal side from which the sealing resin is injected.