Conductive Polymer Etching Mask for High Aspect Ratio IC Holes
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Solution Overview
Problem
The challenge in manufacturing integrated circuit (IC) devices lies in achieving a desired vertical profile and etch rate during plasma etching processes, especially for high aspect ratio structures, where existing methods often result in non-uniform etch rates and profile distortions due to charge accumulation and electric field disturbances.
Innovation Solution
A method involving the formation of conductive polymer layers within etching holes to mitigate charge effects, allowing radicals to follow a desired path and ensuring uniform etching by applying conductive polymer precursors in specific plasma atmospheres, which helps in achieving vertical holes with precise profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma etching process is performed to form high aspect ratio structures, then productivity is improved, but manufacturing precision deteriorates due to non-uniform etch rates and profile distortions
Solution Approach 1:
A conductive polymer layer is introduced as an intermediary substance between the plasma environment and the etching target structure. This layer neutralizes charge accumulation on the structure surface, preventing electric field disturbances that cause profile distortion and non-uniform etching, thereby maintaining manufacturing precision while enabling high productivity
Solution Approach 2:
The electrical conductivity parameter of the etching environment is changed by introducing conductive polymer precursors that polymerize under plasma conditions. This parameter change transforms the non-conductive plasma environment into a conductive one, allowing charge dissipation and preventing the formation of distorted profiles during high-rate etching
2Device complexity
If conventional plasma etching is used for high integration IC devices, then device complexity is reduced, but manufacturing precision worsens due to charge accumulation effects
Solution Approach 1:
The conductive polymer layer serves as a mediator that eliminates charge accumulation effects during plasma etching of complex high integration structures. By providing a conductive pathway, it ensures uniform electric field distribution and maintains etch profile accuracy even in highly integrated device geometries
Solution Approach 2:
The patent replaces the conventional mechanical/physical etching process with a chemically-enhanced process involving conductive polymer formation. This substitution introduces chemical reactions (polymerization) that create a conductive layer, replacing purely physical plasma etching with a combined chemical-physical process that maintains precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and productivity of IC device manufacturing by maintaining uniform etch rates and desired profiles, even in high aspect ratio structures, by neutralizing electric field disturbances and ensuring radicals move in a vertical direction effectively.
Implementation Method 1
forming a conductive polymer layer by supplying a conductive polymer or precursors of the conductive polymer onto the substrate in a second plasma atmosphere
Implementation Method 2
etching a portion of the insulating structure through the opening in a first plasma atmosphere to form a first hole in the insulating structure
Data Source
AI summary
A method of manufacturing an integrated circuit (IC) device including forming an etching target structure on a substrate, forming an etching mask pattern having an opening on the etching target structure, etching a portion of the etching target structure through the opening to form a first hole in the etching target structure, forming a conductive polymer layer to cover the etching target structure inside the first hole, and etching another portion of the etching target structure through the first hole, in a state in which the etching target structure is covered by the conductive polymer layer inside the first hole, to form a second hole in the etching target structure and extending from the first hole toward the substrate may be provided.