Conductive Chemical Compound Resistors in Semiconductor Devices
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Solution Overview
Problem
Advanced metal gate processes in semiconductor device manufacturing require additional lithography masks and implantation steps to form polysilicon resistors, increasing manufacturing costs and complexity.
Innovation Solution
Formation of resistors using a conductive chemical compound material, such as TiN, TaN, or WN, in a middle-of-line (MEOL) or back-end-of-line (BEOL) process, which allows for the creation of high-precision resistors with reduced process flow impact and simplified manufacturing by using only one additional lithography mask and process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If polysilicon resistors are formed in advanced metal gate processes, then resistance can be achieved, but additional lithography masks and implantation steps are required, increasing manufacturing complexity and costs
Solution Approach 1:
The patent changes the material parameter from polysilicon to conductive chemical compound materials (such as TiN, TaN, WN), which fundamentally alters the formation process. This material substitution eliminates the need for additional lithography masks and implantation steps, resolving the contradiction between achieving precise resistor formation and maintaining manufacturing simplicity
Solution Approach 2:
The patent employs conductive chemical compound materials that can be deposited using standard PVD or CVD processes already present in the fabrication line. These materials serve as disposable resistive elements that don't require complex protection schemes or additional processing steps, reducing overall manufacturing complexity while maintaining precision
2Manufacturing precision
If polysilicon resistors are formed with additional lithography masks and implantation steps, then resistance can be lowered, but manufacturing costs increase
Solution Approach 1:
The patent changes the material parameter from polysilicon to conductive chemical compound materials, which can be deposited using standard PVD or CVD processes. This eliminates the need for expensive additional lithography masks and implantation steps, thereby reducing manufacturing costs while maintaining precise resistance control through material composition and geometry
Solution Approach 2:
The conductive chemical compound materials serve multiple functions: they provide the resistive element, can be deposited using existing standard processes, and eliminate the need for separate protection and implantation steps. This multi-functionality reduces both cost and complexity compared to polysilicon-based approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-precision resistors with resistance comparable to polysilicon resistors, simplifying manufacturing, reducing costs, and minimizing process steps while maintaining flexibility and low wafer 3-sigma variation.
Implementation Method 1
forming a conductive chemical compound material over the first insulating material
Implementation Method 2
forming a conductive chemical compound material over the first insulating material
Implementation Method 3
filling the patterned second insulating material with a conductive material to form a first contact
Implementation Method 4
filling the patterned second insulating material with a conductive material to form a first contact
Data Source
AI summary
Semiconductor devices, methods of manufacture thereof, and methods of forming resistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulating material over a workpiece, and forming a conductive chemical compound material over the first insulating material. The conductive chemical compound material is patterned to form a resistor. A second insulating material is formed over the resistor, and the second insulating material is patterned. The patterned second insulating material is filled with a conductive material to form a first contact coupled to a first end of the resistor and to form a second contact coupled to a second end of the resistor.