Conductive Semiconductor Patterns for Silicon Display Interfaces

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Solution Overview

Problem

The existing methods for manufacturing micro-display apparatuses using a silicon substrate with CMOS drive circuits face issues with protecting metal data interfaces from damage during the manufacturing process, which can lead to oxidation of film layers and reduced brightness due to bubbles in photoresist, affecting yield.

Innovation Solution

The use of conductive patterns formed from semiconductor materials, such as metal oxides like CAAC-IGZO, which cover the metal data interfaces without contacting each other, providing protection and enabling conductivity after the manufacturing process, thereby preventing damage and improving yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If photoresist is used to protect metal data interfaces during manufacturing, then the metal interfaces are protected from damage, but bubbles in the photoresist cause oxidation of film layers and reduced brightness

Engineering Contradiction:

Improveprotection of metal data interfacesVSAvoidoxidation and brightness reduction

Core Design Contradiction:

StrengthVSObject-affected harmful factors

Solution Approach 1:

A conductive pattern layer is introduced as an intermediary protective layer between the metal data interface and the photoresist. This conductive pattern serves as a barrier that prevents oxidation and harmful interactions during the manufacturing process, while its conductive nature allows for subsequent electrical connection. The conductive pattern is formed by enabling semiconductor material to be conductive, and it is designed not to contact with adjacent conductive patterns, isolating each metal data interface protection independently.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Strength

If a protective layer is added over metal data interfaces, then damage is prevented, but the complexity of the manufacturing process increases

Engineering Contradiction:

Improveprotection of metal data interfacesVSAvoidmanufacturing process complexity

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The protective function and the electrical connection function are merged into a single conductive pattern layer. This layer simultaneously protects the metal data interface during manufacturing and provides the necessary electrical conductivity for device operation, eliminating the need for separate protective and conductive layers, thus reducing overall structural complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The conductive pattern layer performs multiple functions: it acts as a protective barrier during manufacturing, provides electrical conductivity for signal transmission, and serves as an integral part of the device structure. This multi-functionality reduces the number of separate components needed and simplifies the overall device architecture.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If semiconductor material is used to form conductive patterns, then conductivity is achieved, but the material must be processed to enable conduction

Engineering Contradiction:

Improveelectrical conductivityVSAvoidconduction-enabling process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The electrical conductivity of the semiconductor material is changed by modifying its physical or chemical parameters through the conduction-enabling process. This transformation allows the material to transition from a non-conductive or low-conductivity state to a high-conductivity state suitable for electrical connections, while maintaining the material's protective and structural functions.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively protects metal data interfaces during manufacturing, prevents oxidation, and enhances the brightness and yield of the display apparatus by ensuring electrical conductivity without affecting the metal interfaces' functionality.

Implementation Method 1

the plurality of conductive patterns is formed by enabling a semiconductor material to be conductive

Methodology Applied

Scientific EffectConduction-enabling process:

Implementation Method 2

protecting metal data interfaces from damage during the manufacturing process, which can lead to oxidation of film layers

Methodology Applied

Scientific EffectOxidation prevention: Oxidation

Implementation Method 3

enabling the protection patterns to be conductive comprises: hydrogenating the protection patterns to enable the protection patterns to be conductive

Methodology Applied

Scientific EffectHydrogenation: Hydrogenation

Data Source

PatentUS10784218B2Display device and preparation method therefor

Publication Date: 2020.09.22 BOE TECHNOLOGY GROUP CO LTD

AI summary

The present disclosure provides a display apparatus and a manufacturing method thereof. The display apparatus includes a silicon substrate, a plurality of metal data interfaces disposed on the silicon substrate, and a plurality of conductive patterns covering upper surfaces of the metal data interfaces respectively. The plurality of the conductive patterns is formed by enabling a semiconductor material to be conductive and the plurality of conductive patterns are not contacted with each other.