Conductive Shielding Structure for Semiconductor Signal Isolation
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Solution Overview
Problem
The challenge in the semiconductor industry is to form reliable semiconductor devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, which affects the reliability and efficiency of semiconductor devices.
Innovation Solution
A semiconductor device structure is formed using a substrate with through substrate vias and conductive shielding structures that surround insulating layers, reducing signal interference and allowing for closer spacing of conductive structures without increasing distances between them, thereby enabling smaller device sizes and improved manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency is improved and costs are lowered, but fabrication process difficulty increases and device reliability deteriorates
Solution Approach 1:
The patent implements a nested structure where a conductive shielding layer is placed inside the via structure, surrounded by insulating layers. This nested arrangement (conductive layer within via, insulating layers surrounding conductive layer) allows for compact integration while maintaining signal integrity and reducing interference, thereby enabling reliable fabrication at smaller feature sizes
Solution Approach 2:
The patent introduces insulating layers as intermediary structures between conductive elements (vias and shielding layers). These insulating layers act as mediators that electrically isolate adjacent conductive structures, preventing signal interference and enabling closer spacing of features without compromising reliability, thus allowing smaller feature sizes to be fabricated reliably
2Area of stationary object
If conductive structures are spaced closer together to reduce device size, then area is reduced, but signal interference increases
Solution Approach 1:
The patent introduces insulating layers as intermediary structures between conductive elements (vias and shielding layers). These insulating layers act as mediators that electrically isolate adjacent conductive structures, preventing signal interference and enabling closer spacing of features without compromising reliability, thus allowing smaller feature sizes to be fabricated reliably
Solution Approach 2:
The patent extracts the harmful electromagnetic field generated by conductive structures by introducing a conductive shielding layer that captures and redirects interference signals. This extracted shielding approach removes the harmful effect of signal interference, allowing conductive structures to be placed closer together
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure passing through the substrate. The semiconductor device structure includes a conductive shielding structure passing through the substrate and surrounding the first insulating layer. The semiconductor device structure includes a second insulating layer passing through the substrate and surrounding the conductive shielding structure. The semiconductor device structure includes a second conductive structure passing through the substrate. The semiconductor device structure includes a third insulating layer passing through the substrate and surrounding the second conductive structure. The semiconductor device structure includes a conductive layer passing through the first insulating layer.