Conductive Si-Zr-O Sputter Targets for Stable High-Rate Oxide Deposition

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Solution Overview

Problem

The deposition of dielectric layers, such as oxidic films, is challenging due to hysteresis behavior and low sputter rates, especially when using non-conductive target materials, which require high-frequency power systems and result in non-uniform plasma density and increased costs.

Innovation Solution

A conductive silicon zirconium oxide sputter target with a lamellar structure, comprising SiZrxOy, where x is between 0.02 and 5, and y is between 0.03 and 2*(1+x), allowing for low-frequency AC or DC sputtering, reducing arcing, and enabling high sputtering rates with controlled refractive index and chemical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If non-conductive ceramic targets are used for sputtering oxidic films, then hysteresis behavior is reduced and film deposition rate increases, but the target requires high-frequency RF power systems which are more expensive and have limited sputtering area

Engineering Contradiction:
Improvefilm deposition rateVSAvoidpower system complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies composite materials by combining conductive metal particles (silver, gold, copper, or their alloys) with ceramic oxide material (such as Al2O3, SiO2, TiO2, ZrO2, or their mixtures) to create a composite sputter target. This composite structure provides both the ceramic's ability to reduce hysteresis and the metal's electrical conductivity, enabling the use of simpler DC or low-frequency AC power systems while maintaining high deposition rates. The metal particles are distributed throughout the ceramic matrix, creating conductive pathways that facilitate electron flow and ion bombardment necessary for efficient sputtering.

Inventive Principle:
Principle #40Composite materials

2Ease of operation

If RF power is used to sputter non-conductive target materials, then deposition can be achieved, but the sputtering area is limited due to standing wave effects and plasma density uniformity deteriorates

Engineering Contradiction:
Improvesputtering capabilityVSAvoidplasma density uniformity
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent changes the electrical parameter of the target material from non-conductive to conductive by incorporating metal particles. This parameter change fundamentally alters the interaction with the power source, allowing the use of DC or low-frequency AC power instead of RF power. The conductive nature of the composite target enables uniform current distribution across the entire target surface, eliminating standing wave effects and ensuring uniform plasma density and film deposition across large areas.

Inventive Principle:
Principle #35Parameter changes

3Quantity of substance

If metal targets are used for sputtering with oxygen gas mixture, then oxide layers can be deposited, but severe hysteresis behavior occurs leading to process instability

Engineering Contradiction:
Improveoxide layer depositionVSAvoidprocess stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent uses composite materials where ceramic oxide particles are embedded in a conductive metal matrix. The ceramic oxide component (Al2O3, SiO2, TiO2, ZrO2, or their mixtures) provides the oxygen source for oxide layer formation, while the metal matrix (silver, gold, copper, or their alloys) maintains electrical conductivity. This composite structure prevents the severe hysteresis behavior observed in pure metal targets during reactive sputtering with oxygen, as the metal matrix continuously conducts electrons to sustain the plasma discharge, ensuring process stability and reliable oxide layer deposition.

Inventive Principle:
Principle #40Composite materials

4Device complexity

If DC or low-frequency AC sputtering is used with conductive targets, then simple power systems can be employed, but non-conductive oxidic films cannot be deposited effectively

Engineering Contradiction:
Improvepower system simplicityVSAvoidoxide film deposition
Core Design Contradiction:
Device complexityVSQuantity of substance

Solution Approach 1:

The patent employs composite materials that combine conductive metal particles with ceramic oxide material to create a target that can be effectively sputtered using simple DC or low-frequency AC power systems. The ceramic oxide component (such as Al2O3, SiO2, TiO2, ZrO2, or their mixtures) serves as the source material for oxide film deposition, while the metal component (silver, gold, copper, or their alloys) provides the necessary electrical conductivity. This composite structure enables the use of simple power systems while maintaining effective oxide film deposition capability, resolving the contradiction between power system simplicity and oxide film deposition effectiveness.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a conductive sputter target that enables uniform, high-speed deposition of silicon zirconium oxide layers with controlled optical and mechanical properties, reducing arcing and operational costs, and allowing for large-area coating with improved stability and efficiency.

Implementation Method 1

The gas atoms can be ionized, and the sputter target is bombarded by the gas atoms, so that atoms are freed from the sputter target, and move to the substrate, where they are deposited.

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS11739415B2Conductive sputter targets with silicon, zirconium and oxygen
Publication Date: 2023.08.29 SOLERAS ADVANCED COATINGS NV
  • US11739415B2 patent drawing
  • US11739415B2 patent drawing
  • US11739415B2 patent drawing

AI summary

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm·cm, preferably below 100 ohm·cm, more preferably below 10 ohm·cm, even lower than 1 ohm·cm.