Conductive Layer Stack for Oxidation-Resistant Microelectronic Electrodes
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Solution Overview
Problem
Current microelectronic devices face challenges in maintaining high electric conduction properties during thermal treatments due to oxidation, particularly in the formation of electrodes like LiCoO2, which requires expensive materials like platinum and has restrictive specifications.
Innovation Solution
A microelectronic device with a stack comprising a metal layer and a second layer based on MoSix or WSiy, which provides excellent electric conductivity and protects against oxidation, allowing for the use of less expensive materials and reducing thermal treatment impacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If platinum is used as current collector material, then electric conduction properties are maintained after thermal treatment, but manufacturing cost increases significantly
Solution Approach 1:
The patent uses a composite structure consisting of a base metal layer (such as copper or aluminum) combined with a protective oxide layer. This composite approach allows the base metal to provide excellent electrical conductivity while the oxide layer protects it from oxidation during thermal treatment, eliminating the need for expensive platinum while maintaining both conductivity and oxidation resistance.
Solution Approach 2:
The patent employs inexpensive base metals like copper or aluminum that would normally be susceptible to oxidation, but protects them with a controlled oxide layer. This allows the use of cheap, highly conductive materials instead of expensive platinum, achieving the same functional result through a different, more economical material strategy.
2Ease of manufacture
If conventional materials are used for current collectors, then manufacturing cost is reduced, but oxidation occurs during thermal treatment degrading conductivity
Solution Approach 1:
The patent introduces an oxide layer as an intermediary protective barrier between the base metal and the oxidizing atmosphere during thermal treatment. This oxide layer acts as a mediator that prevents direct oxidation of the conductive base metal, allowing conventional inexpensive materials to maintain their conductivity properties throughout the manufacturing process.
Solution Approach 2:
The patent converts the naturally harmful oxidation process into a beneficial protective mechanism by allowing a controlled oxide layer to form on the base metal. This oxide layer, which would normally degrade conductivity, is instead utilized as a protective barrier that prevents further oxidation of the underlying conductive material, thereby maintaining electrical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MoSi or WSi-based layer achieves low electric resistance (<3 ohms) and maintains conductivity even under oxidizing conditions, making it suitable for electrodes and current collectors in microelectronic devices, including those requiring thermal treatments.
Implementation Method 1
the MoSi or WSi-based layer effectively protects the underlying layer, in particular against oxidation
Implementation Method 2
This association of material layers selected ensures a very satisfactory level of electric conductivity, since it is easy to reach less than 3 ohms of electric resistance
Data Source
AI summary
A microelectronic device is provided, including: a support; and an electrically conductive element including in a stack and successively above a first face of the support, a first layer based on a metal and a second layer, in contact with the first layer, based on a material selected from among MoSi and WSiy. A method for manufacturing the microelectronic device is also provided.