Semiconductor Conductive Stack Repair Dielectrics for Short Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During the manufacturing of semiconductor structures, damage to the bottom dielectric layer and sidewalls of conductive stacks often occurs during cleaning processes, leading to electrical shorts and complicating the formation of conductive components in the peripheral region.
Innovation Solution
A method for forming a semiconductor structure that involves forming two repair dielectric layers with different thicknesses on the conductive stacks and bottom dielectric layer, effectively preventing electrical shorts and allowing for the successful formation of conductive components without additional photolithography and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If overly thick repair dielectric layers are formed to prevent electrical shorts, then electrical short prevention is improved, but the formation of conductive components in the peripheral region becomes difficult and additional photolithography and etching processes are required
Solution Approach 1:
The repair dielectric layer is divided into two distinct layers: a first repair dielectric layer formed after the first cleaning process, and a second repair dielectric layer formed after the second cleaning process. This segmentation allows each layer to serve specific protective functions without requiring excessive thickness, thereby preventing electrical shorts while maintaining process simplicity.
Solution Approach 2:
The first repair dielectric layer is selectively formed to have greater thickness in the peripheral region where damage is more likely to occur and where conductive components need to be formed. The second repair dielectric layer provides additional protection where needed. This localized quality distribution ensures adequate protection without requiring uniformly thick layers across the entire substrate, eliminating the need for additional photolithography and etching processes.
2Reliability
If overly thick repair dielectric layers are formed to prevent electrical shorts, then electrical short prevention is improved, but conductive components cannot be successfully formed in the peripheral region
Solution Approach 1:
The repair dielectric structure is segmented into two layers formed at different stages of the manufacturing process. The first repair dielectric layer is formed before the second conductive stack formation, providing initial protection. The second repair dielectric layer is formed after the second cleaning process, providing final protection. This segmentation enables precise control over where and how thick the repair dielectric is, allowing conductive components to be formed accurately in the peripheral region while still preventing electrical shorts.
Solution Approach 2:
The first repair dielectric layer is formed in advance, before the second conductive stack formation process. This preliminary action provides protective coverage during critical subsequent steps, preventing damage that would require additional thick layers and subsequent removal processes, thereby ensuring accurate formation of conductive components.
Data Source
AI summary
The method for forming the semiconductor structure includes the following steps. A substrate that is divided into a cell region and a peripheral region is provided. A bottom dielectric layer is formed on the substrate. A first stacked structure and a second stacked structure are formed on the bottom dielectric layer. The first stacked structure is disposed in the cell region and the second stacked structure is disposed in the peripheral region. The first stacked structure is patterned to form first conductive stacks. A first cleaning process is performed. A first repair dielectric layer is formed on the first conductive stacks, the second stacked structure, and the bottom dielectric layer. The second stacked structure is patterned to form second conductive stacks. A second cleaning process is performed. A second repair dielectric layer is formed on the first conductive stacks, the second conductive stacks, and the bottom dielectric layer.