Conductive Terminal Structure for Compact SiC Power Modules
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Solution Overview
Problem
Conventional semiconductor devices with power switching elements face challenges in efficiently converting DC voltage to AC voltage while maintaining high thermal conductivity and electrical performance, particularly in applications requiring compact and efficient power modules.
Innovation Solution
The semiconductor device incorporates silicon carbide (SiC) power semiconductor chips with a support substrate composed of a Direct Bonded Copper (DBC) substrate, featuring a ceramic insulating layer and copper conductive layers, to enhance thermal conductivity and electrical performance, and includes a sealing resin to protect and integrate the components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor devices with power switching elements are used, then the device structure is simple and easy to manufacture, but the thermal conductivity and electrical performance are insufficient for high-current switching operations
Solution Approach 1:
The patent employs a DBC (Direct Bonded Copper) substrate comprising a ceramic insulating layer with copper conductive layers bonded to both surfaces. This composite structure combines the high thermal conductivity of copper with the electrical insulation and mechanical strength of ceramic, enabling efficient heat dissipation while maintaining electrical performance for high-current switching operations.
Solution Approach 2:
The DBC substrate serves multiple functions simultaneously: it provides mechanical support for the semiconductor elements, conducts heat away from the power switching elements through the copper layers, provides electrical insulation through the ceramic layer, and offers mounting surfaces for electrical connections. This multi-functionality resolves the contradiction by integrating several required functions into a single component.
2Reliability
If silicon carbide power semiconductor chips are used, then the electrical performance and thermal conductivity are improved, but the manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary bonding of the copper conductive layers to the ceramic insulating layer to form the DBC substrate before mounting the silicon carbide power semiconductor chips. This preliminary preparation of the substrate with integrated thermal and electrical pathways simplifies the subsequent chip mounting process and ensures optimal thermal management from the outset.
3Volume of moving object
If a compact power module design is implemented, then the device size is reduced, but the thermal management capability may be compromised
Solution Approach 1:
The patent utilizes the vertical dimension by bonding copper conductive layers to both the upper and lower surfaces of the ceramic insulating layer in the DBC substrate. This three-dimensional configuration enables heat to be conducted away from the power semiconductor elements in multiple directions, maintaining effective thermal management while reducing the horizontal footprint of the power module.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a compact and efficient power module capable of high-current switching operations with improved thermal management, enabling effective conversion of DC to AC voltage and enhanced reliability.
Implementation Method 1
The support substrate includes an insulating base and a conductive layer provided on each side of the base. The base is made of, for example, a ceramic material. The conductive layers are made of Cu (copper), for example.
Implementation Method 2
The conductive layers are made of Cu (copper), for example. The semiconductor element is bonded to one of the conductive layers.
Data Source
AI summary
A semiconductor device includes at least one terminal, and the terminal includes a cylindrical holder having electrical conductivity and a metal pin inserted in the holder. The semiconductor device further includes a terminal support supporting the holder, and a sealing resin covering a part of the holder and covering the terminal support. The sealing resin includes a resin obverse surface facing a first side in a thickness direction. The holder includes a first surface located at one end on the first side in the thickness direction and a first outer side surface extending in the thickness direction. The first surface is located at a position different from the resin obverse surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pin protrudes beyond the resin obverse surface toward the first side in the thickness direction.