Conductive Structure in Trench Isolation for IC Shrinkage

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Solution Overview

Problem

The miniaturization of semiconductor integrated circuits is hindered by the limited ability to reduce the size of electrically conductive structures due to the necessity of reserved spaces for these structures in trench isolation systems.

Innovation Solution

A semiconductor structure is developed where a trench isolation structure with insulating layers is formed in a substrate, allowing an electrically conductive structure to fill a groove within the trench isolation structure, thereby reducing the need for additional space and enabling the conductive structure to extend beyond the trench, thus minimizing the overall size of the integrated circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electrically conductive structures are offset from trench isolation structures to prevent crosstalk, then electrical performance is improved, but the overall size of the semiconductor integrated circuit increases due to reserved spaces

Engineering Contradiction:
Improveelectrical performanceVSAvoidoverall size
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The electrically conductive structure is merged with the trench isolation structure by positioning the conductive structure to extend into and beyond the trench isolation structure. This integration eliminates the need for separate reserved spaces while maintaining electrical isolation through the insulating layers, thereby reducing the overall circuit size without compromising electrical performance

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The conductive structure extends in multiple dimensions - vertically beyond the trench isolation structure and laterally within the trench. This multi-dimensional configuration allows the conductive structure to utilize space more efficiently, reducing the footprint required in the planar dimension while maintaining necessary electrical isolation

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If reserved spaces are allocated for electrically conductive structures in trench isolation systems, then electrical isolation is ensured, but the ability to miniaturize the integrated circuit is limited

Engineering Contradiction:
Improveelectrical isolationVSAvoidminiaturization ability
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The trench isolation structure serves multiple functions: it provides electrical isolation through insulating layers and simultaneously accommodates the electrically conductive structure within its boundaries. The conductive structure extends beyond the trench to perform its electrical function while the insulating layers maintain isolation, eliminating the need for additional reserved spaces and enabling circuit miniaturization

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20230261046A1Method of forming semiconductor structure
Publication Date: 2023.08.17 FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
  • US20230261046A1 patent drawing
  • US20230261046A1 patent drawing
  • US20230261046A1 patent drawing

AI summary

A semiconductor structure and a method of forming the semiconductor structure are disclosed. Through forming an electrically conductive structure on a trench isolation structure, utilization of a space above the trench isolation structure is achievable, which can reduce the space required in a semiconductor integrated circuit to accommodate the electrically conductive structure, thus facilitating dimensional shrinkage of the semiconductor integrated circuit.