Conductive Via Sidewall Deposition for Lower-Cost Precision
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for forming conductive vias in semiconductor devices are costly and lack precision, often requiring high-aspect ratio etching that is both expensive and unreliable.
Innovation Solution
A method involving the formation of larger openings in insulative material with a ring of conductive material, where connecting portions are removed to isolate via portions, allowing for precise control of via thickness and cost-effective production by using less precise etching processes and deposition techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-aspect ratio etching is used to form conductive vias, then via precision is improved, but manufacturing cost increases and reliability decreases
Solution Approach 1:
The conductive via formation process is segmented into two distinct stages: first forming a larger opening with relaxed etching requirements, then depositing conductive material on the sidewalls to create the final via structure. This segmentation allows each stage to be optimized independently, reducing overall manufacturing complexity and cost while maintaining precision.
Solution Approach 2:
A larger opening is formed in advance before the conductive via is finalized. This preliminary opening serves as a template that guides subsequent conductive material deposition, allowing less precise etching while ensuring accurate via placement and dimensions through controlled material deposition on the pre-formed sidewalls.
2Device complexity
If conventional via formation methods are used, then manufacturing process is simpler, but manufacturing margin and reliability are reduced
Solution Approach 1:
The process is divided into separate steps: opening formation, sidewall conductive material deposition, and connecting portion removal. This segmentation improves manufacturing margin by allowing independent optimization and control of each step, reducing variability and defects while maintaining reasonable process complexity.
Solution Approach 2:
The sidewall conductive material acts as an intermediary structure that bridges the larger opening and the final via. This intermediate structure provides a controlled pathway for current flow and enables precise via formation through material deposition on the sidewalls, improving reliability through better process control.
3Ease of manufacture
If less precise etching processes are used, then manufacturing cost decreases, but via thickness control precision worsens
Solution Approach 1:
The patent replaces precise mechanical etching with a deposition-based approach. Conductive material is deposited on the sidewalls of a pre-formed opening, and via thickness is controlled through deposition parameters rather than etching depth, enabling less precise etching while maintaining via thickness control through material deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of conductive vias at a lower cost and with higher margin than conventional techniques, while ensuring precise control over via thickness and reliability, improving manufacturing efficiency.
Implementation Method 1
forming a ring of electrically conductive material on/about the sidewall of the insulative material
Data Source
AI summary
Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.