Conductive Via Sidewall Transformation for Signal Interference Reduction
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Solution Overview
Problem
The increasing complexity in manufacturing semiconductor devices leads to signal interference between conductive elements due to miniaturization, necessitating an improved manufacturing process to address these deficiencies.
Innovation Solution
A method involving forming conductive structures over a substrate, transforming sidewall portions into dielectric portions through heat treatment, and removing these dielectric portions to create a high aspect ratio conductive via structure, with an inter-layer dielectric layer forming air spacers to reduce signal interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive structures are miniaturized to increase integration, then device functionality and integration density are improved, but signal interference between conductive elements increases
Solution Approach 1:
A dielectric spacer is introduced as an intermediary material between adjacent conductive structures. The spacer physically separates the conductive elements, preventing direct signal coupling while maintaining the miniaturized layout. This mediator approach allows high integration density without suffering from signal interference, as the dielectric material blocks electromagnetic coupling between neighboring conductors.
Solution Approach 2:
The solution transitions from two-dimensional planar separation to three-dimensional vertical separation by forming dielectric spacers that extend upward from the substrate. This dimensional change allows conductive structures to be closely spaced in the lateral direction while maintaining electrical isolation through the vertical dielectric barrier, thereby achieving high integration without signal interference.
2Productivity
If the width of conductive structures is reduced to increase integration, then device size is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The dielectric spacer width is determined self-aligningly by the width of the conductive structure and the thickness of the dielectric layer, rather than requiring independent patterning. This self-service mechanism automatically ensures precise width control and uniform spacing, reducing manufacturing complexity and precision requirements while maintaining high integration density.
Solution Approach 2:
The dielectric spacer is formed in advance before final conductive structure patterning. This preliminary action establishes a pre-defined spacing framework that guides subsequent manufacturing steps, ensuring consistent width control and reducing the precision demands on later lithography and etching processes.
3Shape
If heat treatment process is applied to transform sidewall portions, then dielectric portions are formed to increase aspect ratio, but process complexity increases
Solution Approach 1:
The heat treatment process transforms the physical and chemical parameters of the sidewall material, converting conductive material into dielectric material through controlled oxidation or nitridation. This parameter change enables the formation of dielectric spacers that provide electrical isolation while maintaining the original geometric footprint, thereby increasing the effective aspect ratio without adding structural complexity.
Solution Approach 2:
The heat treatment is applied locally only to the sidewall portions of the conductive structures, transforming only the regions that will become spacers. This localized quality change ensures that the dielectric transformation occurs precisely where needed for isolation, while the rest of the conductive structures retain their original properties, thus achieving the desired shape modification without complicating the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively increases the aspect ratio of conductive structures, reducing signal interference and improving semiconductor device performance by creating a high aspect ratio conductive via structure that minimizes crosstalk between adjacent conductive elements.
Implementation Method 1
the heat treatment process is an oxidation process or a nitridation process
Implementation Method 2
the heat treatment process is an oxidation process or a nitridation process
Data Source
AI summary
The present disclosure provides a method for preparing a conductive plug. The method includes forming a first conductive structure over a substrate; forming a first dielectric structure over the first conductive structure; transforming a sidewall portion of the first conductive structure into a first dielectric portion; and removing the first dielectric portion such that a width of the first dielectric structure is greater than a width of a remaining portion of the first conductive structure.